Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MA3J741E0L

MA3J741E0L

Panasonic

DIODE ARRAY SCHOTTKY 30V SMINI3

0

DA4X101F0R

DA4X101F0R

Panasonic

DIODE ARRAY GP 80V 100MA MINI4

0

MA3Z792D0L

MA3Z792D0L

Panasonic

DIODE ARRAY SCHOTTKY 30V SMINI3

0

MA3J7420GL

MA3J7420GL

Panasonic

DIODE ARRAY SCHOTTKY 30V SMINI3

0

MA3S795E0L

MA3S795E0L

Panasonic

DIODE ARRAY SCHOTTKY 30V SSMINI3

0

MA3D799

MA3D799

Panasonic

DIODE ARRAY SCHOTTKY 30V TO220D

0

MA3D761

MA3D761

Panasonic

DIODE ARRAY SCHOTTKY 90V TO220D

0

DA5S101K0R

DA5S101K0R

Panasonic

DIODE ARRAY GP 80V 100MA SSMINI5

0

MA3X153A0L

MA3X153A0L

Panasonic

DIODE ARRAY GP 80V 100MA MINI3

0

MA3S781EGL

MA3S781EGL

Panasonic

DIODE ARRAY SCHOTTKY 30V SSMINI3

0

MA3J142EGL

MA3J142EGL

Panasonic

DIODE ARRAY GP 80V 100MA SMINI3

0

MA3J74200L

MA3J74200L

Panasonic

DIODE ARRAY SCHOTTKY 30V SMINI3

0

DA4J101K0R

DA4J101K0R

Panasonic

DIODE ARRAY GP 80V 100MA SMINI4

0

MA4ZD0300L

MA4ZD0300L

Panasonic

DIODE ARRAY SCHOTTKY 45V SMINI4

0

MA4SD0100L

MA4SD0100L

Panasonic

DIODE ARRAY SCHOTTKY 30V SSMINI4

0

MA3G655

MA3G655

Panasonic

DIODE ARRAY GP 300V 20A TO3F-A1

0

MA3D749A

MA3D749A

Panasonic

DIODE ARRAY SCHOTTKY 45V TO220D

0

MA4ZD1400L

MA4ZD1400L

Panasonic

DIODE ARRAY SCHOTTKY 20V SMINI4

0

MAS3795EGL

MAS3795EGL

Panasonic

DIODE ARRAY SCHOTTKY 30V SSSMINI

0

MA6X12500L

MA6X12500L

Panasonic

DIODE ARRAY GP 40V 100MA MINI6

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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