Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
DB5S310K0R

DB5S310K0R

Panasonic

DIODE ARRAY SCHOTTKY 30V SSMINI5

3935

MAS3132EGL

MAS3132EGL

Panasonic

DIODE ARRAY 80V 100MA SSSMINI3

19646

DA3J103E0L

DA3J103E0L

Panasonic

DIODE ARRAY GP 80V 100MA SMINI3

0

MA3D752A

MA3D752A

Panasonic

DIODE ARRAY SCHOTTKY 45V TO220D

48

MA6X12600L

MA6X12600L

Panasonic

DIODE ARRAY GP 80V 100MA MINI6

4019

MA3S781D0L

MA3S781D0L

Panasonic

DIODE ARRAY SCHOTTKY 30V SSMINI3

2572

DA3S102D0L

DA3S102D0L

Panasonic

DIODE ARRAY GP 80V 100MA SSMINI3

1937

MA6Z12100L

MA6Z12100L

Panasonic

DIODE ARRAY GP 80V 100MA SMINI6

345

DA6X109W0R

DA6X109W0R

Panasonic

DIODE ARRAY GP 80V 100MA MINI6

285

MA3U74900L

MA3U74900L

Panasonic

DIODE ARRAY SCHOTTKY 40V 5A 2UG

2830

MA5J002E0L

MA5J002E0L

Panasonic

DIODE ARRAY GP 80V 100MA SMINI5

2276

DB4X313F0R

DB4X313F0R

Panasonic

DIODE ARRAY SCHOTTKY 30V MINI4

5423

MA4X86200L

MA4X86200L

Panasonic

DIODE ARRAY GP 35V 100MA MINI4

6192

DB3X314F0L

DB3X314F0L

Panasonic

DIODE ARRAY SCHOTTKY 30V MINI3

1

DB3J316F0L

DB3J316F0L

Panasonic

DIODE ARRAY SCHOTTKY 30V SMINI3

0

DA4J104K0R

DA4J104K0R

Panasonic

DIODE ARRAY GP 80V 200MA SMINI4

5431

DB3J314J0L

DB3J314J0L

Panasonic

DIODE ARRAY SCHOTTKY 30V SMINI3

843

DA3J102D0L

DA3J102D0L

Panasonic

DIODE ARRAY GP 80V 100MA SMINI3

147

MA3D750

MA3D750

Panasonic

DIODE ARRAY SCHOTTKY 40V TO220D

191

DA6X106U0R

DA6X106U0R

Panasonic

DIODE ARRAY GP 80V 100MA MINI6

3381

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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