Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MA4X19400L

MA4X19400L

Panasonic

DIODE ARRAY SCHOTTKY 40V MINI4

4835

DA3J104F0L

DA3J104F0L

Panasonic

DIODE ARRAY GP 80V 200MA SMINI3

1123

DA6X103Q0R

DA6X103Q0R

Panasonic

DIODE ARRAY GP 80V 100MA MINI6

3925

DA3S103E0L

DA3S103E0L

Panasonic

DIODE ARRAY GP 80V 100MA SSMINI3

546

MA4X16000L

MA4X16000L

Panasonic

DIODE ARRAY GP 40V 100MA MINI4

311

MA4X72600L

MA4X72600L

Panasonic

DIODE ARRAY SCHOTTKY 30V MINI4

4505

DB3J316N0L

DB3J316N0L

Panasonic

DIODE ARRAY SCHOTTKY 30V SMINI3

15399

DB3X314J0L

DB3X314J0L

Panasonic

DIODE ARRAY SCHOTTKY 30V MINI3

1040

DB5H206K0L

DB5H206K0L

Panasonic

DIODE ARRAY SCHOTTKY 20V WSMINI5

10

DA6X102S0R

DA6X102S0R

Panasonic

DIODE ARRAY GP 80V 100MA MINI6

295

DB5S406K0R

DB5S406K0R

Panasonic

DIODE ARRAY SCHOTTKY 45V SSMINI5

6155

DA6X102P0R

DA6X102P0R

Panasonic

DIODE ARRAY GP 80V 100MA MINI6

2950

MA3S781F0L

MA3S781F0L

Panasonic

DIODE ARRAY SCHOTTKY 30V SSMINI3

3614

MA3D752

MA3D752

Panasonic

DIODE ARRAY SCHOTTKY 40V TO220D

5

DB6J316K0R

DB6J316K0R

Panasonic

DIODE ARRAY SCHOTTKY 30V SMINI6

119

DA6X108K0R

DA6X108K0R

Panasonic

DIODE ARRAY GP 300V 200MA MINI6

1734

MA3D649

MA3D649

Panasonic

DIODE ARRAY GP 200V 5A TO220D

20

DA37103E0L

DA37103E0L

Panasonic

DIODE ARRAY 80V 100MA SSSMINI3

5436

MA4X71400L

MA4X71400L

Panasonic

DIODE ARRAY SCHOTTKY 30V MINI4

1981

DB4J314K0R

DB4J314K0R

Panasonic

DIODE ARRAY SCHOTTKY 30V SMINI4

7382

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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