Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
UFT20020A

UFT20020A

Microsemi

DIODE MODULE 200V 100A

0

MSAD36-12

MSAD36-12

Microsemi

DIODE MODULE 1.2KV 36A D1

0

MSAD100-12

MSAD100-12

Microsemi

DIODE MODULE 1.2KV 100A D1

0

FST8145A

FST8145A

Microsemi

DIODE MODULE 45V

0

CPT30045D

CPT30045D

Microsemi

DIODE MODULE 45V TO244AB

0

MSAD200-08

MSAD200-08

Microsemi

DIODE MODULE 800V 200A D2

0

CPT40080D

CPT40080D

Microsemi

DIODE MODULE 80V TO244AB

0

CPT600100A

CPT600100A

Microsemi

DIODE MODULE 100V TO244AB

0

UFT7260SM3C

UFT7260SM3C

Microsemi

DIODE MODULE 600V 35A SM3

0

APT2X21DC120J

APT2X21DC120J

Microsemi

DIODE MODULE 1.2KV 20A SOT227

0

MSAD200-18

MSAD200-18

Microsemi

DIODE MODULE 1.8KV 200A D2

0

CPT300100

CPT300100

Microsemi

DIODE MODULE 100V 150A TO244AB

0

CPT60045D

CPT60045D

Microsemi

DIODE MODULE 45V 300A TO244AB

0

MSKD165-18

MSKD165-18

Microsemi

DIODE MODULE 1.8KV 165A D2

0

CPT50235A

CPT50235A

Microsemi

DIODE MODULE 35V TO244AB

0

UFT7260SM6A

UFT7260SM6A

Microsemi

DIODE MODULE 600V 35A SM6

0

UFT7020A

UFT7020A

Microsemi

DIODE MODULE 200V 35A

0

UFT7130D

UFT7130D

Microsemi

DIODE MODULE 300V 35A

0

CPT500100A

CPT500100A

Microsemi

DIODE MODULE 100V TO244AB

0

CPT600150A

CPT600150A

Microsemi

DIODE MODULE 150V TO244AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top