Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
CPT50235

CPT50235

Microsemi

DIODE MODULE 35V TO244AB

0

UFT40020A

UFT40020A

Microsemi

DIODE MODULE 200V 200A

0

MSAD120-18

MSAD120-18

Microsemi

DIODE MODULE 1.8KV 120A D1

0

UFT20120

UFT20120

Microsemi

DIODE MODULE 200V 100A

0

MSAD165-12

MSAD165-12

Microsemi

DIODE MODULE 1.2KV 165A D2

0

UFT7260SM1D

UFT7260SM1D

Microsemi

DIODE MODULE 600V 35A SM1

0

UFT7260SM6D

UFT7260SM6D

Microsemi

DIODE MODULE 600V 35A SM6

0

UFT7020D

UFT7020D

Microsemi

DIODE MODULE 200V 35A

0

UFT7260SM4D

UFT7260SM4D

Microsemi

DIODE MODULE 600V 35A SM4

0

CPT50145A

CPT50145A

Microsemi

DIODE MODULE 45V TO244AB

0

MSAD200-12

MSAD200-12

Microsemi

DIODE MODULE 1.2KV 200A D2

0

CPT60145A

CPT60145A

Microsemi

DIODE MODULE 45V TO244AB

0

CPT300100D

CPT300100D

Microsemi

DIODE MODULE 100V TO244AB

0

MSKD100-18

MSKD100-18

Microsemi

DIODE MODULE 1.8KV 100A D1

0

MSAD60-18

MSAD60-18

Microsemi

DIODE MODULE 1.8KV 60A D1

0

MSAD100-18

MSAD100-18

Microsemi

DIODE MODULE 1.8KV 100A D1

0

MSAD70-16

MSAD70-16

Microsemi

DIODE MODULE 1.6KV 70A D1

0

CPT20145A

CPT20145A

Microsemi

DIODE MODULE 45V 100A TO244AB

0

MSKD120-18

MSKD120-18

Microsemi

DIODE MODULE 1.8KV 120A D1

0

CPT30040A

CPT30040A

Microsemi

DIODE MODULE 40V TO244AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top