Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
CPT30060A

CPT30060A

Microsemi

DIODE MODULE 60V TO244AB

0

CPT30145A

CPT30145A

Microsemi

DIODE MODULE 45V TO244AB

0

CPT30045A

CPT30045A

Microsemi

DIODE MODULE 45V TO244AB

0

CPT30050D

CPT30050D

Microsemi

DIODE MODULE 50V TO244AB

0

CPT50235D

CPT50235D

Microsemi

DIODE MODULE 35V TO244AB

0

MSAD36-18

MSAD36-18

Microsemi

DIODE MODULE 1.8KV 36A D1

0

UFT20120A

UFT20120A

Microsemi

DIODE MODULE 200V 100A

0

FST30050

FST30050

Microsemi

DIODE MODULE 50V 150A TO244

0

UFT7130A

UFT7130A

Microsemi

DIODE MODULE 300V 35A

0

UFT20020D

UFT20020D

Microsemi

DIODE MODULE 200V 100A

0

UFT7260SM3D

UFT7260SM3D

Microsemi

DIODE MODULE 600V 35A SM3

0

MSAD120-12

MSAD120-12

Microsemi

DIODE MODULE 1.2KV 120A D1

0

UFT5010A

UFT5010A

Microsemi

DIODE GP 100V 25A TO-3

0

MSAD60-12

MSAD60-12

Microsemi

DIODE MODULE 1.2KV 60A D1

0

UFT7260SM4A

UFT7260SM4A

Microsemi

DIODE MODULE 600V 35A SM4

0

MSAD36-16

MSAD36-16

Microsemi

DIODE MODULE 1.6KV 36A D1

0

UFT40020D

UFT40020D

Microsemi

DIODE MODULE 200V 200A

0

UFT7260SM4C

UFT7260SM4C

Microsemi

DIODE MODULE 600V 35A SM4

0

MSAD70-18

MSAD70-18

Microsemi

DIODE MODULE 1.8KV 70A D1

0

UFT20140A

UFT20140A

Microsemi

DIODE MODULE 400V 100A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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