Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
FST30100

FST30100

Microsemi

DIODE ARRAY SCHOTTKY 100V TO247

11

FST50100

FST50100

Microsemi

DIODE ARRAY SCHOTTKY 100V TO247

43

JANTX1N6660

JANTX1N6660

Microsemi

DIODE ARRAY SCHOTTKY 45V TO254AA

0

MSCD36-08

MSCD36-08

Microsemi

DIODE MODULE 800V 36A D1

12

MSCD60-12

MSCD60-12

Microsemi

DIODE MODULE 1.2KV 60A D1

2

MSCD200-12

MSCD200-12

Microsemi

DIODE MODULE 1.2KV 200A SD2

3

MSCD120-12

MSCD120-12

Microsemi

DIODE MODULE 1.2KV 120A D1

1

APT2X50DC60J

APT2X50DC60J

Microsemi

DIODE MODULE 600V 50A SOT227

11

APT2X101DL40J

APT2X101DL40J

Microsemi

DIODE MODULE 400V 100A ISOTOP

27

JAN1N6660CAT1

JAN1N6660CAT1

Microsemi

DIODE ARRAY SCHOTTKY 45V TO254AA

0

JANTX1N6660CAT1

JANTX1N6660CAT1

Microsemi

DIODE ARRAY SCHOTTKY 45V TO254AA

0

LX7710MDWC-V

LX7710MDWC-V

Microsemi

DIODE ARRAY GP 140V 1A 20CSOIC

0

APT2X21DC60J

APT2X21DC60J

Microsemi

DIODE MODULE 600V 20A SOT227

4

JANTX1N6660DT1

JANTX1N6660DT1

Microsemi

DIODE ARRAY SCHOTTKY 45V TO254AA

0

APT2X41DC60J

APT2X41DC60J

Microsemi

DIODE MODULE 600V 40A SOT227

0

JANTX1N6660CCT1

JANTX1N6660CCT1

Microsemi

DIODE ARRAY SCHOTTKY 45V TO254AA

0

LX7710MDWC-Q

LX7710MDWC-Q

Microsemi

DIODE ARRAY GP 140V 1A 20CSOIC

0

5962-1621001QXC

5962-1621001QXC

Microsemi

DIODE ARRAY GP 140V 1A 20CSOIC

0

JAN1N6660CCT1

JAN1N6660CCT1

Microsemi

DIODE ARRAY SCHOTTKY 45V TO254AA

0

JANTXV1N6660CAT1

JANTXV1N6660CAT1

Microsemi

DIODE ARRAY SCHOTTKY 45V TO254AA

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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