Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
JAN1N6660

JAN1N6660

Microsemi

DIODE ARRAY SCHOTTKY 45V TO254AA

0

5962-1621001VXC

5962-1621001VXC

Microsemi

DIODE ARRAY GP 140V 1A 20CSOIC

0

JANTXV1N6660DT1

JANTXV1N6660DT1

Microsemi

DIODE ARRAY SCHOTTKY 45V TO254AA

0

JAN1N6660DT1

JAN1N6660DT1

Microsemi

DIODE ARRAY SCHOTTKY 45V TO254AA

0

MSCD60-16

MSCD60-16

Microsemi

DIODE MODULE 1.6KV 60A D1

0

MSKD70-08

MSKD70-08

Microsemi

DIODE MODULE 800V 70A D1

0

MSKD60-16

MSKD60-16

Microsemi

DIODE MODULE 1.6KV 60A D1

0

FST153100

FST153100

Microsemi

DIODE MODULE 100V 75A TO249

0

CPT30145

CPT30145

Microsemi

DIODE MODULE 45V 150A 2TOWER

0

FST16230D

FST16230D

Microsemi

DIODE MODULE 30V TO249

0

CPT12050

CPT12050

Microsemi

DIODE MODULE 50V 60A TO244AB

0

UFT20140

UFT20140

Microsemi

DIODE MODULE 400V 100A

0

MAD1105E3/TU

MAD1105E3/TU

Microsemi

DIODE ARRAY 400MA 90V 14DIP

0

FST16145

FST16145

Microsemi

DIODE MODULE 45V 80A FLATPACK

0

UFT7020

UFT7020

Microsemi

DIODE MODULE 200V 35A

0

FST31180

FST31180

Microsemi

DIODE ARRAY SCHOTTKY 180V TO220

0

FST20150

FST20150

Microsemi

DIODE ARRAY SCHOTTKY 150V TO220

0

APT2X40DC120J

APT2X40DC120J

Microsemi

DIODE MODULE 1.2KV 40A SOT227

0

FST16145A

FST16145A

Microsemi

DIODE MODULE 45V TO249

0

APT30DQ100BCTG

APT30DQ100BCTG

Microsemi

DIODE ARRAY GP 1000V 30A TO247

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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