Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
FST16045A

FST16045A

Microsemi

DIODE MODULE 45V TO249

0

MSKD60-08

MSKD60-08

Microsemi

DIODE MODULE 800V 60A D1

0

APT2X30DC60J

APT2X30DC60J

Microsemi

DIODE MODULE 600V 30A SOT227

0

CPT50060

CPT50060

Microsemi

DIODE MODULE 60V 250A 2TOWER

0

MSCD70-12

MSCD70-12

Microsemi

DIODE MODULE 1.2KV 70A D1

0

UFT14280D

UFT14280D

Microsemi

DIODE MODULE 800V 70A TO249

0

APT2X60DC120J

APT2X60DC120J

Microsemi

DIODE MODULE 1.2KV 60A SOT227

0

FST160100A

FST160100A

Microsemi

DIODE MODULE 100V TO249

0

UFT7150

UFT7150

Microsemi

DIODE MODULE 500V 35A

0

FST30100E3

FST30100E3

Microsemi

DIODE ARRAY SCHOTTKY 100V TO247

0

MSKD70-16

MSKD70-16

Microsemi

DIODE MODULE 1.6KV 70A D1

0

MSKD165-12

MSKD165-12

Microsemi

DIODE MODULE 1.2KV 165A SD2

0

APT10SCD120BCT

APT10SCD120BCT

Microsemi

DIODE SCHOTTKY 1.2KV 36A TO247

0

APT2X100D30J

APT2X100D30J

Microsemi

DIODE MODULE 300V 100A ISOTOP

0

MSKD70-12

MSKD70-12

Microsemi

DIODE MODULE 1.2KV 70A D1

0

FST80100A

FST80100A

Microsemi

DIODE MODULE 100V TO249

0

UFT7260SM5A

UFT7260SM5A

Microsemi

DIODE MODULE 600V 35A SM5

0

UFT14020

UFT14020

Microsemi

DIODE MODULE 200V 70A

0

APT2X150DL60J

APT2X150DL60J

Microsemi

DIODE MODULE 600V 150A ISOTOP

0

UFT14020D

UFT14020D

Microsemi

DIODE MODULE 200V 70A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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