Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
S8-4150/TR13

S8-4150/TR13

Roving Networks / Microchip Technology

DIODE ARRAY GP 50V 400MA 8SOIC

0

MSCDC450A120AG

MSCDC450A120AG

Roving Networks / Microchip Technology

PM-DIODE-SIC-SBD-SP6C

6

MSCDC200A70D1PAG

MSCDC200A70D1PAG

Roving Networks / Microchip Technology

PM-DIODE-SIC-SBD-D1P

18

APT15D40BCTG

APT15D40BCTG

Roving Networks / Microchip Technology

DIODE ARRAY GP 400V 15A TO247

0

APT2X60DQ100J

APT2X60DQ100J

Roving Networks / Microchip Technology

DIODE MODULE 1KV 60A ISOTOP

0

APT2X61D60J

APT2X61D60J

Roving Networks / Microchip Technology

DIODE MODULE 600V 60A ISOTOP

0

APT2X101D100J

APT2X101D100J

Roving Networks / Microchip Technology

DIODE MODULE 1KV 95A ISOTOP

0

APT40DQ60BCTG

APT40DQ60BCTG

Roving Networks / Microchip Technology

DIODE ARRAY GP 600V 40A TO247

166

APT2X100D20J

APT2X100D20J

Roving Networks / Microchip Technology

DIODE MODULE 200V 100A ISOTOP

0

MSCDC200A170D1PAG

MSCDC200A170D1PAG

Roving Networks / Microchip Technology

PM-DIODE-SIC-SBD-D1P

0

APT2X60S20J

APT2X60S20J

Roving Networks / Microchip Technology

SCHOTTKY RECTIFIER 200V 600A ISO

90

APT2X101D40J

APT2X101D40J

Roving Networks / Microchip Technology

DIODE MODULE 400V 100A ISOTOP

193

APT2X31D60J

APT2X31D60J

Roving Networks / Microchip Technology

DIODE MODULE 600V 30A ISOTOP

20

S8-4150E3/TR7

S8-4150E3/TR7

Roving Networks / Microchip Technology

DIODE ARRAY GP 50V 400MA 8SOIC

0

S16-4150/TR7

S16-4150/TR7

Roving Networks / Microchip Technology

DIODE ARRAY GP 50V 400MA 16SOIC

0

MBR3050CTE3/TU

MBR3050CTE3/TU

Roving Networks / Microchip Technology

DIODE ARRAY SCHOTTKY 50V TO220AB

0

MSC2X101SDA070J

MSC2X101SDA070J

Roving Networks / Microchip Technology

SIC SBD 700 V 100 A DUAL ISOTOP

90

APT2X151DL60J

APT2X151DL60J

Roving Networks / Microchip Technology

DIODE MODULE 600V 150A ISOTOP

12

MSCDC150KK170D1PAG

MSCDC150KK170D1PAG

Roving Networks / Microchip Technology

PM-DIODE-SIC-SBD-D1P

9

MSCDC100KK70D1PAG

MSCDC100KK70D1PAG

Roving Networks / Microchip Technology

PM-DIODE-SIC-SBD-D1P

24

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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