Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBR3080FCTE3/TU

MBR3080FCTE3/TU

Roving Networks / Microchip Technology

DIODE ARRAY SCHOTTKY 80V TO220AB

0

APT2X61D120J

APT2X61D120J

Roving Networks / Microchip Technology

DIODE MODULE 1.2KV 53A ISOTOP

19

LXS201-23-2/TR

LXS201-23-2/TR

Roving Networks / Microchip Technology

SI SCHOTTKY NON HERMETIC PLASTIC

0

APT2X100DQ100J

APT2X100DQ100J

Roving Networks / Microchip Technology

DIODE MODULE 1KV 100A ISOTOP

0

APT2X101DQ60J

APT2X101DQ60J

Roving Networks / Microchip Technology

DIODE MODULE 600V 100A ISOTOP

142

S8-4150/TR7

S8-4150/TR7

Roving Networks / Microchip Technology

DIODE ARRAY GP 50V 400MA 8SOIC

0

APT2X101D30J

APT2X101D30J

Roving Networks / Microchip Technology

DIODE MODULE 300V 100A ISOTOP

0

APT15DQ60BCTG

APT15DQ60BCTG

Roving Networks / Microchip Technology

DIODE ARRAY GP 600V 15A TO247

5110

APT2X61D30J

APT2X61D30J

Roving Networks / Microchip Technology

DIODE MODULE 300V 60A ISOTOP

0

LXS201-23-2

LXS201-23-2

Roving Networks / Microchip Technology

SI SCHOTTKY NON HERMETIC PLASTIC

189

APT60D100LCTG

APT60D100LCTG

Roving Networks / Microchip Technology

DIODE ARRAY GP 1000V 60A TO264

0

APTDF400KK20G

APTDF400KK20G

Roving Networks / Microchip Technology

DIODE MODULE 200V 500A SP6

40

APT2X60D120J

APT2X60D120J

Roving Networks / Microchip Technology

DIODE MODULE 1.2KV 53A ISOTOP

40

APT2X101D120J

APT2X101D120J

Roving Networks / Microchip Technology

DIODE MODULE 1.2KV 93A ISOTOP

27

S16-4150E3/TR13

S16-4150E3/TR13

Roving Networks / Microchip Technology

DIODE ARRAY GP 75V 400MA 16SOIC

0

APT2X30D60J

APT2X30D60J

Roving Networks / Microchip Technology

DIODE MODULE 600V 30A ISOTOP

0

APT2X60D100J

APT2X60D100J

Roving Networks / Microchip Technology

DIODE MODULE 1KV 55A ISOTOP

0

APT2X30D20J

APT2X30D20J

Roving Networks / Microchip Technology

DIODE MODULE 200V 30A ISOTOP

0

APT30D20BCTG

APT30D20BCTG

Roving Networks / Microchip Technology

DIODE ARRAY GP 200V 30A TO247

0

APT30DQ60BHBG

APT30DQ60BHBG

Roving Networks / Microchip Technology

DIODE ARRAY GP 600V 30A TO247

69

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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