Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
APT2X31DQ120J

APT2X31DQ120J

Roving Networks / Microchip Technology

DIODE MODULE 1.2KV 30A ISOTOP

0

MSC2X51SDA070J

MSC2X51SDA070J

Roving Networks / Microchip Technology

SIC SBD 700 V 50 A DUAL PARALLEL

80

MSCDC300A70AG

MSCDC300A70AG

Roving Networks / Microchip Technology

PM-DIODE-SIC-SBD-SP6C

12

MSCDC600A120AG

MSCDC600A120AG

Roving Networks / Microchip Technology

PM-DIODE-SIC-SBD-SP6C

6

MSCDC100KK170D1PAG

MSCDC100KK170D1PAG

Roving Networks / Microchip Technology

PM-DIODE-SIC-SBD-D1P

12

APT2X61D40J

APT2X61D40J

Roving Networks / Microchip Technology

DIODE MODULE 400V 60A ISOTOP

30

APT30DQ120BCTG

APT30DQ120BCTG

Roving Networks / Microchip Technology

DIODE ARRAY GP 1200V 30A TO247

0

APT2X60D60J

APT2X60D60J

Roving Networks / Microchip Technology

DIODE MODULE 600V 60A ISOTOP

0

APT2X61D100J

APT2X61D100J

Roving Networks / Microchip Technology

DIODE MODULE 1KV 55A ISOTOP

44

JAN1N7037CCU1

JAN1N7037CCU1

Roving Networks / Microchip Technology

DIODE SCHOTTKY 35A 100V SMD

0

APTDF400AA100G

APTDF400AA100G

Roving Networks / Microchip Technology

DIODE MODULE 1KV 500A SP6

0

JANTX1N4148UBCA

JANTX1N4148UBCA

Roving Networks / Microchip Technology

DIODE GEN PURP 75V 200MA SMD

0

JAN1N4148UBD

JAN1N4148UBD

Roving Networks / Microchip Technology

DIODE GEN PURP 75V 200MA SMD

0

JAN1N6674R

JAN1N6674R

Roving Networks / Microchip Technology

DIODE GEN PURP 500V 15A D5D

0

JANTX1N4148UBCC

JANTX1N4148UBCC

Roving Networks / Microchip Technology

DIODE GEN PURP 75V 200MA SMD

0

JANTX1N7039CCT1

JANTX1N7039CCT1

Roving Networks / Microchip Technology

DIODE SCHOTTKY 150V 35A TO254

0

JANTXV1N7039CCT1

JANTXV1N7039CCT1

Roving Networks / Microchip Technology

DIODE SCHOTTKY 150V 35A TO254

0

APTDF400AA20G

APTDF400AA20G

Roving Networks / Microchip Technology

DIODE MODULE 200V 500A SP6

0

APTDF400AK100G

APTDF400AK100G

Roving Networks / Microchip Technology

DIODE MODULE 1KV 500A SP6

0

JAN1N7039CCT1

JAN1N7039CCT1

Roving Networks / Microchip Technology

DIODE SCHOTTKY 150V 35A TO254

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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