Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
APT2X101DQ120J

APT2X101DQ120J

Roving Networks / Microchip Technology

DIODE MODULE 1.2KV 100A ISOTOP

95

APT30D60BHBG

APT30D60BHBG

Roving Networks / Microchip Technology

DIODE ARRAY GP 600V 27A TO247

0

MBR2045CTE3/TU

MBR2045CTE3/TU

Roving Networks / Microchip Technology

DIODE SCHOTTKY 10A 45V TO220AB

34

MSC2X30SDA170J

MSC2X30SDA170J

Roving Networks / Microchip Technology

SIC SBD 1700 V 30 A DUAL ISOTOP

30

MBR3090CTE3/TU

MBR3090CTE3/TU

Roving Networks / Microchip Technology

DIODE ARRAY SCHOTTKY 90V TO220AB

0

MSCDC200KK170D1PAG

MSCDC200KK170D1PAG

Roving Networks / Microchip Technology

PM-DIODE-SIC-SBD-D1P

9

JANTX1N6511

JANTX1N6511

Roving Networks / Microchip Technology

DIODE ARRAY GP 75V 300MA AXIAL

93

APT2X31D100J

APT2X31D100J

Roving Networks / Microchip Technology

DIODE MODULE 1KV 28A ISOTOP

14

APTDF400AK170G

APTDF400AK170G

Roving Networks / Microchip Technology

DIODE MODULE 1.7KV 480A SP6

0

MBR3060FCTE3/TU

MBR3060FCTE3/TU

Roving Networks / Microchip Technology

DIODE ARRAY SCHOTTKY 60V TO220AB

0

APT2X101D60J

APT2X101D60J

Roving Networks / Microchip Technology

DIODE MODULE 600V 100A ISOTOP

207

MSC2X100SDA070J

MSC2X100SDA070J

Roving Networks / Microchip Technology

SIC SBD 700 V 100 A DUAL ISOTOP

28

S8-4148/TR13

S8-4148/TR13

Roving Networks / Microchip Technology

DIODE ARRAY GP 75V 400MA 8SOIC

0

APT2X30DQ60J

APT2X30DQ60J

Roving Networks / Microchip Technology

DIODE MODULE 600V 30A ISOTOP

0

APT60S20B2CTG

APT60S20B2CTG

Roving Networks / Microchip Technology

DIODE ARRAY SCHOTTKY 200V TMAX

818

MBR3045CTE3/TU

MBR3045CTE3/TU

Roving Networks / Microchip Technology

DIODE ARRAY SCHOTTKY 45V TO220AB

0

MSC2X30SDA120J

MSC2X30SDA120J

Roving Networks / Microchip Technology

SIC SBD 1200 V 30 A DUAL ISOTOP

29

MSCDC100A120D1PAG

MSCDC100A120D1PAG

Roving Networks / Microchip Technology

PM-DIODE-SIC-SBD-D1P

0

LXS301-23-2

LXS301-23-2

Roving Networks / Microchip Technology

SI SCHOTTKY NON HERMETIC PLASTIC

0

APT60D60LCTG

APT60D60LCTG

Roving Networks / Microchip Technology

DIODE ARRAY GP 600V 60A TO264

80

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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