Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
APT100S20LCTG

APT100S20LCTG

Roving Networks / Microchip Technology

DIODE ARRAY SCHOTTKY 200V TO264

211

MSCDC450A70AG

MSCDC450A70AG

Roving Networks / Microchip Technology

PM-DIODE-SIC-SBD-SP6C

7

MSCDC450A170AG

MSCDC450A170AG

Roving Networks / Microchip Technology

PM-DIODE-SIC-SBD-SP6C

3

MBR40100PTE3/TU

MBR40100PTE3/TU

Roving Networks / Microchip Technology

DIODE SCHOTTKY 40A 100V TO-247AD

0

APT30D20BCAG

APT30D20BCAG

Roving Networks / Microchip Technology

DIODE ARRAY GP 200V 30A TO247

138

MBR30100CTE3/TU

MBR30100CTE3/TU

Roving Networks / Microchip Technology

DIODE SCHOTTKY 15A 100V TO220AB

0

APT15D60BCTG

APT15D60BCTG

Roving Networks / Microchip Technology

DIODE ARRAY GP 600V 15A TO247

0

APT2X61DQ60J

APT2X61DQ60J

Roving Networks / Microchip Technology

DIODE MODULE 600V 60A ISOTOP

0

APT30D30BCTG

APT30D30BCTG

Roving Networks / Microchip Technology

DIODE ARRAY GP 300V 30A TO247

110

MBR3050FCTE3/TU

MBR3050FCTE3/TU

Roving Networks / Microchip Technology

DIODE ARRAY SCHOTTKY 50V TO220AB

0

MSCDC150KK120D1PAG

MSCDC150KK120D1PAG

Roving Networks / Microchip Technology

PM-DIODE-SIC-SBD-D1P

15

MSCDC100A70D1PAG

MSCDC100A70D1PAG

Roving Networks / Microchip Technology

PM-DIODE-SIC-SBD-D1P

24

APT2X100DQ60J

APT2X100DQ60J

Roving Networks / Microchip Technology

DIODE MODULE 600V 100A ISOTOP

30

APT2X60DQ60J

APT2X60DQ60J

Roving Networks / Microchip Technology

DIODE MODULE 600V 60A ISOTOP

0

APT2X100DQ120J

APT2X100DQ120J

Roving Networks / Microchip Technology

DIODE MODULE 1.2KV 100A ISOTOP

0

APT30D100BCTG

APT30D100BCTG

Roving Networks / Microchip Technology

DIODE ARRAY GP 1000V 30A TO247

0

MBR20200CTE3/TU

MBR20200CTE3/TU

Roving Networks / Microchip Technology

DIODE SCHOTTKY 10A 200V TO220AB

0

MSCDC150A70D1PAG

MSCDC150A70D1PAG

Roving Networks / Microchip Technology

PM-DIODE-SIC-SBD-D1P

21

APT60DQ60BCTG

APT60DQ60BCTG

Roving Networks / Microchip Technology

DIODE ARRAY GP 600V 60A TO247

1196

MBR3080CTE3/TU

MBR3080CTE3/TU

Roving Networks / Microchip Technology

DIODE ARRAY SCHOTTKY 80V TO220AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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