Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MSC2X51SDA120J

MSC2X51SDA120J

Roving Networks / Microchip Technology

SIC SBD 1200 V 50 A DUAL PARALLE

40

MSC2X31SDA120J

MSC2X31SDA120J

Roving Networks / Microchip Technology

SIC SBD 1200 V 30 A DUAL PARALLE

30

S16-4148/TR13

S16-4148/TR13

Roving Networks / Microchip Technology

DIODE ARRAY GP 75V 400MA 16SOIC

0

S16-4148E3/TR13

S16-4148E3/TR13

Roving Networks / Microchip Technology

DIODE ARRAY GP 75V 400MA 16SOIC

0

APTDF400KK170G

APTDF400KK170G

Roving Networks / Microchip Technology

DIODE MODULE 1.7KV 480A SP6

1

APT2X60DQ120J

APT2X60DQ120J

Roving Networks / Microchip Technology

DIODE MODULE 1.2KV 60A ISOTOP

3

APT30D120BCTG

APT30D120BCTG

Roving Networks / Microchip Technology

DIODE ARRAY GP 1200V 30A TO247

61

MSC2X50SDA170J

MSC2X50SDA170J

Roving Networks / Microchip Technology

SIC SBD 1700 V 50 A DUAL ANTI-PA

30

APT2X100D60J

APT2X100D60J

Roving Networks / Microchip Technology

DIODE MODULE 600V 100A ISOTOP

0

MSCDC150KK70D1PAG

MSCDC150KK70D1PAG

Roving Networks / Microchip Technology

PM-DIODE-SIC-SBD-D1P

21

APT2X101DQ100J

APT2X101DQ100J

Roving Networks / Microchip Technology

DIODE MODULE 1KV 100A ISOTOP

20

APT2X30S20J

APT2X30S20J

Roving Networks / Microchip Technology

SCHOTTKY RECTIFIER 200V 300A ISO

90

APT15D100BCTG

APT15D100BCTG

Roving Networks / Microchip Technology

DIODE ARRAY GP 1000V 15A TO247

0

APT15DQ100BCTG

APT15DQ100BCTG

Roving Networks / Microchip Technology

DIODE ARRAY GP 1000V 15A TO247

256

APT60DQ100LCTG

APT60DQ100LCTG

Roving Networks / Microchip Technology

DIODE ARRAY GP 1000V 60A TO264

0

S16-4148E3/TR7

S16-4148E3/TR7

Roving Networks / Microchip Technology

DIODE ARRAY GP 75V 400MA 16SOIC

0

APT2X31D120J

APT2X31D120J

Roving Networks / Microchip Technology

DIODE MODULE 1.2KV 30A ISOTOP

39

APT30D100BHBG

APT30D100BHBG

Roving Networks / Microchip Technology

DIODE ARRAY GP 1000V 18A TO247

115

MSC2X50SDA120J

MSC2X50SDA120J

Roving Networks / Microchip Technology

SIC SBD 1200 V 50 A DUAL ANTI-PA

152

APT2X60D40J

APT2X60D40J

Roving Networks / Microchip Technology

DIODE MODULE 400V 60A ISOTOP

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top