Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
STPS60170CT

STPS60170CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 170V TO220

16

STTH3002CW

STTH3002CW

STMicroelectronics

DIODE ARRAY GP 200V 15A TO247-3

217

STPS20M60CT

STPS20M60CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V TO220AB

0

STTH10002TV1

STTH10002TV1

STMicroelectronics

DIODE MODULE 200V 50A ISOTOP

459

STPS41H100CG-TR

STPS41H100CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V D2PAK

2

STPSC16H065CT

STPSC16H065CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 650V TO220

886

STPS30170CW

STPS30170CW

STMicroelectronics

DIODE ARRAY SCHOTTKY 170V TO247

1461

STTH16003TV1

STTH16003TV1

STMicroelectronics

DIODE MODULE 300V 60A ISOTOP

1

STPS40L15CT

STPS40L15CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 15V TO220AB

287

FERD20L60CTS

FERD20L60CTS

STMicroelectronics

DIODE ARRAY 60V 10A TO220AB

1948

FERD20H60CG-TR

FERD20H60CG-TR

STMicroelectronics

DIODE ARRAY 60V 10A D2PAK

937

STTH16R04CG-TR

STTH16R04CG-TR

STMicroelectronics

DIODE ARRAY GP 400V 8A D2PAK

11

BAT46AWFILM

BAT46AWFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V SOT323

542

STPS3045CT

STPS3045CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V TO220AB

3112

STPS20L25CG

STPS20L25CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 25V TO263

0

STTH16L06CT

STTH16L06CT

STMicroelectronics

DIODE ARRAY GP 600V 10A TO220AB

0

STPS40M60CT

STPS40M60CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V TO220AB

0

STPS61H100CWY

STPS61H100CWY

STMicroelectronics

AUTOMOTIVE 100 V, 60A, LOW DROP

0

STTH16R04CT

STTH16R04CT

STMicroelectronics

DIODE ARRAY GP 400V 8A TO220AB

87

STPS40M80CT

STPS40M80CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V TO220AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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