Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
STTH1002CB

STTH1002CB

STMicroelectronics

DIODE ARRAY GP 200V 8A DPAK

1234

FERD20L60CG-TR

FERD20L60CG-TR

STMicroelectronics

DIODE ARRAY 60V 10A D2PAK

6929

STPS4045CWY

STPS4045CWY

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V TO247

0

STPS10L40CT

STPS10L40CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 40V TO220AB

1695

STPS30L45CFP

STPS30L45CFP

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V TO220FP

0

BAT54AWFILMY

BAT54AWFILMY

STMicroelectronics

DIODE ARRAY SCHOTTKY 40V SOT323

17

STTH2003CG-TR

STTH2003CG-TR

STMicroelectronics

DIODE ARRAY GP 300V 10A D2PAK

0

BAS70-05FILM

BAS70-05FILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 70V SOT23-3

10016

STPS3060CW

STPS3060CW

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V TO247-3

0

STTH3002CT

STTH3002CT

STMicroelectronics

DIODE ARRAY GP 200V 15A TO220AB

944

STPSC20H12CWY

STPSC20H12CWY

STMicroelectronics

AUTOMOTIVE SIC DIODES

475

STTH16L06CGY-TR

STTH16L06CGY-TR

STMicroelectronics

DIODES AND RECTIFIERS

710

STPS20L40CFP

STPS20L40CFP

STMicroelectronics

DIODE ARRAY SCHOTTKY 40V TO220FP

0

STPS20120CTN

STPS20120CTN

STMicroelectronics

DIODE ARRAY SCHOTTKY 120V TO220

1000

STPS4045CT

STPS4045CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V TO220AB

0

STTH6110TV2

STTH6110TV2

STMicroelectronics

DIODE MODULE 1KV 30A ISOTOP

237

STPS15L60CB

STPS15L60CB

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V DPAK

207

STPS3045CG-TR

STPS3045CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V D2PAK

0

STTH16L06CG-TR

STTH16L06CG-TR

STMicroelectronics

DIODE ARRAY GP 600V 10A D2PAK

703

STPS20150CG-TR

STPS20150CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 150V D2PAK

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top