Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
STPS20S100CR

STPS20S100CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V I2PAK

0

STTH20003TV1

STTH20003TV1

STMicroelectronics

DIODE MODULE 300V 100A ISOTOP

52

STPS20170CT

STPS20170CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 170V TO220

88

STPS40L15CW

STPS40L15CW

STMicroelectronics

DIODE ARRAY SCHOTTKY 15V TO247-3

836

STPS240H100TV1Y

STPS240H100TV1Y

STMicroelectronics

AUTOMOTIVE 100 V, 2X120A, POWER

0

STTH9012TV2

STTH9012TV2

STMicroelectronics

DIODE MODULE 1.2KV 45A ISOTOP

465

STTH6110TV1

STTH6110TV1

STMicroelectronics

DIODE MODULE 1KV 30A ISOTOP

0

STPS60L30CW

STPS60L30CW

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V TO247-3

0

STTH100W06CW

STTH100W06CW

STMicroelectronics

DIODE ARRAY GP 600V 50A TO247

26

STTH9012TV1

STTH9012TV1

STMicroelectronics

DIODE MODULE 1.2KV 45A ISOTOP

0

STPS30M60CR

STPS30M60CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V I2PAK

6

BAT54SWFILMY

BAT54SWFILMY

STMicroelectronics

DIODE ARRAY

7497

FERD40L60CG-TR

FERD40L60CG-TR

STMicroelectronics

DIODE ARRAY 60V 20A D2PAK

0

STTH200L04TV1

STTH200L04TV1

STMicroelectronics

DIODE MODULE 400V 120A ISOTOP

133

STPS20H100CR

STPS20H100CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V I2PAK

0

STPS40L45CW

STPS40L45CW

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V TO247-3

1413

STTH2003CGY-TR

STTH2003CGY-TR

STMicroelectronics

DIODE ARRAY GP 300V 10A D2PAK

927

STPS80H100TV

STPS80H100TV

STMicroelectronics

DIODE MODULE 100V 40A ISOTOP

1521

STPS1545CR

STPS1545CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V I2PAK

0

STTH1002CR

STTH1002CR

STMicroelectronics

DIODE ARRAY GP 200V 8A I2PAK

29

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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