TVS - Mixed Technology

Image	Part Number	Description / PDF	Quantity	Rfq
	2839318 Phoenix Contact	SURGE PROTECTION PLUG 24V	0
	ADG467BRS-REEL Analog Devices, Inc.	IC OCTAL PROTECTOR 20SSOP	0
	P1101CA2RP Wickmann / Littelfuse	SIDACTOR 95V 90A SURGE D0-214	0
	B1161UA4LRP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 50A MS013	0
	MC3423DR2G Sanyo Semiconductor/ON Semiconductor	IC SENSOR UNDERVOLTAGE 8-SOIC	0
	0402ESDA-MLPT PowerStor (Eaton)	DIODE PROTECTION	0
	P0721SC Wickmann / Littelfuse	SIDAC SLIC UNI 65V 400A DO-214AA	0
	B1160CC Wickmann / Littelfuse	BATTRAX SLIC SNGL NEG 400A DO214	0
	8231706 Würth Elektronik Midcom	VARISTOR 6.0VDC .15PF ESD 0402	0
	P0901SA Wickmann / Littelfuse	SIDAC SLIC UNI 75V 150A DO-214AA	0
	B72527G3350K000 TDK EPCOS	VARISTOR 56V 100A RADIAL	0
	SDP0640Q38B Wickmann / Littelfuse	SIDACTOR BI 64V 100A QFN 5X6 8L	0
	IP4085CX4/LF,135 NXP Semiconductors	IC OVP REVERSE BATT PROTECT 4CSP	0
	0603ESDA-TR1 PowerStor (Eaton)	SUPPRESSOR ESD 24VDC 0603 SMD	0
	ECLAMP3202A.TCT Semtech	IC ESD/EMI PROT DIODES	0
	NCP3712ASNT3 Sanyo Semiconductor/ON Semiconductor	IC SWITCH OVP HIGH SIDE SC74-6	0
	HDMI2C2-14HD STMicroelectronics	IC ESD SIGNAL BOOST HDMI 36QFN	0
	B72547H3140S200 TDK EPCOS	VARISTOR 22V 1.2KA RADIAL	0
	B72547G3200K000 TDK EPCOS	VARISTOR 33V 1.2KA RADIAL	0
	SP720ABT Wickmann / Littelfuse	TVS ARRAY ESD 14 INPUT 16-SOIC	0

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials