TVS - Mixed Technology

Image	Part Number	Description / PDF	Quantity	Rfq
	SPUSB1BJT Wickmann / Littelfuse	SURGE SUPPRESOR USB 22OHM SC70-6	0
	L9700 STMicroelectronics	IC LIMITER HEX PREC 8-MINIDIP	0
	SDP0242Q12FLRP Wickmann / Littelfuse	SIDACTOR BI 24V 50A QFN 3X3 2L	0
	IP4389CX4,315 NXP Semiconductors	IC ESD PROTECT HS MMC 4CSP	0
	ADG467BRS Analog Devices, Inc.	IC CHAN PROTECTOR OCTAL 20-SSOP	0
	B1100CARP Wickmann / Littelfuse	BATTRAX SLIC PROTEC 90A DO-214AA	0
	P1101SCRP Wickmann / Littelfuse	SIDAC UNIDIR 90V 500A DO-214AA	0
	P0721SARP Wickmann / Littelfuse	SIDAC UNIDIR 65V 150A DO-214AA	0
	B1200CC Wickmann / Littelfuse	BATTRAX SLIC SNGL NEG 400A DO214	0
	P0721SA Wickmann / Littelfuse	SIDAC SLIC UNI 65V 150A DO-214AA	0
	ADG465BRM-REEL7 Analog Devices, Inc.	IC 1CH PROTECTOR 8MSOP	0
	8231714 Würth Elektronik Midcom	VARISTOR 14VDC .15PF ESD 0402	0
	B1100CA Wickmann / Littelfuse	BATTRAX SLIC SGL NEG 150A DO-214	0
	SP724AHT Wickmann / Littelfuse	TVS ARRAY ESD 4 INPUT SOT-23	0
	P1101SARP Wickmann / Littelfuse	SIDAC UNIDIR 90V 150A DO-214AA	0
	SDP1300Q38B Wickmann / Littelfuse	SIDAC BI 120V 100A QFN 5X6 8L	0
	B72587H3200K000 TDK EPCOS	VARISTOR 33V 800A RADIAL	0
	8231614 Würth Elektronik Midcom	VARISTOR 14VDC .15PF ESD 0603	0
	P0641CA2RP Wickmann / Littelfuse	SIDACTOR 58V 90A SURGE D0-214	0
	ZEN056V130A16YM Wickmann / Littelfuse	POLYZEN PPTC/ZENER SMD	0

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials