TVS - Mixed Technology

Image	Part Number	Description / PDF	Quantity	Rfq
	B72587E3200K000 TDK EPCOS	VARISTOR 33V 800A RADIAL	0
	NUS3045MNT1 Sanyo Semiconductor/ON Semiconductor	IC OVP W/30V P-CH MOSFET DFN8	0
	B72547L3140S200 TDK EPCOS	VARISTOR 22V 1.2KA RADIAL	0
	SN65220YZBT Texas Instruments	IC TVS USB PORT SINGLE 4-DSBGA	0
	B2050CC Wickmann / Littelfuse	BATTRAX SLIC SNGL POS 400A DO214	0
	SP723AB Wickmann / Littelfuse	TVS ARRAY ESD 6 INPUT 8-SOIC	0
	NCP348MTTXG Sanyo Semiconductor/ON Semiconductor	IC MOSFET DRIVER DUAL 12V 10WDFN	0
	MC3423DG Sanyo Semiconductor/ON Semiconductor	IC SENSOR UNDERVOLTAGE 8SOIC	0
	MAX366CPA Maxim Integrated	IC CIRCUIT PROT SIGNAL-LINE 8DIP	0
	P0721CA2RP Wickmann / Littelfuse	SIDAC UNIDIR DUAL 65V 150A DO214	0
	ZEN098V130A24LS Wickmann / Littelfuse	POLYZEN 9.8V PPTC/ZENER SMD	0
	LVM2P-015R10431E25 Wickmann / Littelfuse	LVM2P-015R10431E25	0
	MAX6498ATA+ Maxim Integrated	IC POWER MANAGEMENT	0
	NUS3045MNT1G Sanyo Semiconductor/ON Semiconductor	IC OVP W/30V P-CH MOSFET DFN8	0
	FVC2300-BK J.W. Miller / Bourns	THYRISTOR PROTECT BIDIR 4A SMD	0
	LCP03-1501RL STMicroelectronics	TVS 8SOIC	0
	IP4775CZ38,118 NXP Semiconductors	IC ESD SUPPRESSOR AUDIO 38TSSOP	0
	ZEN132V130A24LS Wickmann / Littelfuse	POLYZEN 13.2V PPTC/ZENER SMD	0
	P1301CA2RP Wickmann / Littelfuse	SIDAC SLIC UNI 120V 50A DO214	0
	ZEN132V230A16CE Wickmann / Littelfuse	TVS POLYZEN SMD 13.4V	0

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials