TVS - Mixed Technology

Part Number	Description / PDF	Quantity
V2F105C150Y1FRP Elco (AVX)	VARISTOR CAP FEEDTHRU	0
BPHA24D24LV Eaton	REPLACEMENT MODULE 24V HYBRID LV	0
2804694 Phoenix Contact	SURGE PROTECTOR DIN RAIL	0
NIV1161MTWTAG Sanyo Semiconductor/ON Semiconductor	LOW CAPACITANCE ESD PROTECTION W	0
IXBOD1-36R Wickmann / Littelfuse	IC DIODE MODULE BOD 0.7A 3600V	20
IXBOD1-19RD Wickmann / Littelfuse	IC DIODE MODULE BOD 0.2A 1900V	20
4B06B-540-290/290 J.W. Miller / Bourns	RES NET MULT OHM 13SIP	0
BPHA150D150LV Eaton	REPLACEMENT MODULE 150V HYBRID L	0
V2F114C300Y1FTP Elco (AVX)	VARISTOR CAP FEEDTHRU	0
002445205 Altech Corporation	SURGE PROTECTIVEB-PV1000VDC 12.5	0
IXBOD1-32R Wickmann / Littelfuse	IC DIODE MODULE BOD 0.9A 3200V	120
NIV1241MTWTAG Sanyo Semiconductor/ON Semiconductor	24V LOW CAPACITANCE ESD PROTECTI	0
IXBOD1-14RD Wickmann / Littelfuse	IC DIODE MODULE BOD 0.2A 1400V	0
4B06B-540-090/260 J.W. Miller / Bourns	RES NET MULT OHM 13SIP	0
BPP300SYPV Eaton	REPLACEMENT MODULE 300V MCOV FOR	0
002445203 Altech Corporation	SURGE PROTECTIVEB-PV1000VDC 12.5	0
V2F114C300Y1FRP Elco (AVX)	VARISTOR CAP FEEDTHRU	0
V2F118A400Y2ETP Elco (AVX)	VARISTOR CAP FEEDTHRU	0
002445207 Altech Corporation	SURGE PROTECTIVEC-PV550VDC 20KA	0
BPH600YPV Eaton	REPLACEMENT MODULE 600V MCOV HYB	0

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials