TVS - Mixed Technology

Part Number	Description / PDF	Quantity
GMOV-20D151K J.W. Miller / Bourns	GMOV 20MM, 150VRMS	348
CLT01-38SQ7-TR STMicroelectronics	HIGH SPEED DIGITAL INPUT CURRENT	0
VK103MK151R011P050 KEMET	VARISTOR 18V 150A RADIAL	0
ESDU02A24VR25V Stackpole Electronics, Inc.	VARISTOR 25V 0402	0
PIP208 Roving Networks / Microchip Technology	TRANS VOLT SUPP 100V 15000W UNID	0
MAX4867EUT-T Analog Devices, Inc.	OVERVOLTAGE-PROTECTION IC	5000
IXBOD1-09 Wickmann / Littelfuse	IC SGL DIODE BOD 0.9A 900V FP	187
DSLP0240T023G6RP Wickmann / Littelfuse	SIDACTOR G.FAST 24V 30A SOT23-6	18000
ESDU03A5V5R17V Stackpole Electronics, Inc.	VARISTOR 17V 0603	33980
B3164UCLTP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 500A MS013	0
B1101UC4LTP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 500A MS013	0
P0901Q22CLRP Wickmann / Littelfuse	SIDAC UNI 75V 500A QFN 3.3 2L	0
VM105MK122R014P050 KEMET	VARISTOR 24V 1.2KA RADIAL	0
GMOV-20D171K J.W. Miller / Bourns	GMOV 20MM, 175VRMS	193
SDP1100Q38CB Wickmann / Littelfuse	SIDAC BI 100V 500A QFN 5X6 8L	0
VK104MM151R002P050 KEMET	VARISTOR 4V 150A RADIAL	0
VK103MM151R006P050 KEMET	VARISTOR 11V 150A RADIAL	0
NCP361MUTBG Sanyo Semiconductor/ON Semiconductor	IC USB OVERVOLT PROT CTRLR 6UDFN	0
MAX366CPA+ Maxim Integrated	IC CIRCUIT PROT SIGNAL-LINE 8DIP	1341800
ADG5462FBRUZ Analog Devices, Inc.	IC CHANNEL PROTECTOR QD 16TSSOP	0

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials