TVS - Mixed Technology

Image Part Number Description / PDF Quantity Rfq
GMOV-20D950K

GMOV-20D950K

J.W. Miller / Bourns

GMOV 20MM, 95VRMS

135

SN65220DBVR

SN65220DBVR

Texas Instruments

IC SINGLE USB PORT TVS SOT-23-6

92540

SN75240P

SN75240P

Texas Instruments

IC DUAL USB PORT TVS 8-DIP

812

82357240010

82357240010

Würth Elektronik Midcom

ESD SUPPRESSOR TVS 200V 0402

10000

NCP374MU075TXG

NCP374MU075TXG

SPST, PDSO12

10726

SP721ABTG

SP721ABTG

Wickmann / Littelfuse

TVS ARRAY ESD 6 INPUT 30V 8-SOIC

1161

2377-45-HS

2377-45-HS

J.W. Miller / Bourns

STATION PROTECT HYBRID MAX DUTY

0

VM155MK122R030P050

VM155MK122R030P050

KEMET

VARISTOR 47V 1.2KA RADIAL

0

SDP0080Q38CB

SDP0080Q38CB

Wickmann / Littelfuse

SIDACTOR BI 8V 500A QFN 5X6 8L

0

GMOV-14D450K

GMOV-14D450K

J.W. Miller / Bourns

GMOV 14MM, 45VRMS

278

V2F118X500Y3DDP

V2F118X500Y3DDP

Elco (AVX)

VARISTOR CAP FEEDTHRU 50V 0805

2000

MAX4867EUT

MAX4867EUT

Analog Devices, Inc.

OVERVOLTAGE-PROTECTION IC

2626

ESD03A12VR17V

ESD03A12VR17V

Stackpole Electronics, Inc.

VARISTOR 17V 0603

1630

GMOV-14D500K

GMOV-14D500K

J.W. Miller / Bourns

GMOV 14MM, 50VRMS

131

2859521

2859521

Phoenix Contact

SURGE ARRESTER 3 PHASE RAILMOUNT

2

GMOV-20D301K

GMOV-20D301K

J.W. Miller / Bourns

GMOV 20MM, 300VRMS

0

2906321

2906321

Phoenix Contact

VAL-MS+TE-AR-T1/T2 75/P-FM

10

2800107

2800107

Phoenix Contact

ARRESTER W/ARC CHOPPING SPARK

2

SP03-3.3BTG

SP03-3.3BTG

Wickmann / Littelfuse

TVS SPA 2CH 3.3V 150A 16PF 8SOIC

489212500

VK104MK151R035P050

VK104MK151R035P050

KEMET

VARISTOR 56V 150A RADIAL

0

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Silicon-Polymer Hybrid TVSCombines fast silicon diode response with polymer self-recovery capabilityUSB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVSStacked silicon layers for multi-stage voltage clampingIndustrial power supplies, 5G base stations
Glass-Passivated Hybrid TVSHermetic glass encapsulation with integrated RC filteringAutomotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

  • Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
  • Passivation layer: Borosilicate glass or polymer composite
  • Electrode system: Multi-fingered aluminum-copper hybrid metallization
  • Thermal management: Embedded graphite heat spreader
  • Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

ParameterImportance
Breakdown Voltage (Vbr)Determines protection threshold for normal operation
Clamping Voltage (Vc)Defines maximum voltage transmitted to protected circuit
Response Time (tr)Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)Indicates energy absorption capability during transients
Capacitance (Cj)Critical for high-speed signal integrity preservation
Operating TemperatureDefines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

  • Telecommunications: 5G NR base stations, optical transceivers
  • Industrial Automation: PLC systems, motor drives
  • Automotive Electronics: CAN-FD interfaces, LiDAR systems
  • Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
LittelfuseSMxxxHCA Series40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronicsTVSH SeriesAutomotive qualified, AEC-Q101 certified, 300W peak power
BournsPGB1 SeriesMulti-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

  • Match breakdown voltage to system operating voltage (typically 10-15% margin)
  • Verify clamping voltage compatibility with protected IC's maximum ratings
  • Consider parasitic capacitance for high-speed (>1Gbps) applications
  • Evaluate thermal derating curves for intended operating environment
  • Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
  • Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

  • Integration of AI-based predictive protection algorithms
  • Development of 3D-printed nanocomposite TVS structures
  • Adoption of wafer-level packaging for 0.1pF capacitance levels
  • Implementation of energy recovery features in hybrid architectures
  • Advancements in terahertz transient suppression materials
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