TVS - Mixed Technology

Part Number	Description / PDF	Quantity
2856582 Phoenix Contact	SURGE VOLTAGE ARRESTER DIN RAIL	0
MAX367CWN+ Maxim Integrated	IC SIGNAL-LINE CIRC PROT 18-SOIC	309
GMOV-20D131K J.W. Miller / Bourns	GMOV 20MM, 130VRMS	130
B3204UCLRP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 500A MS013	0
TPD2S017DBVR Texas Instruments	IC ESD SOLUTION 2CH SOT23-6	990
VM155MK801R040P050 KEMET	VARISTOR 68V 800A RADIAL	0
B3104UCLTP Wickmann / Littelfuse	BATTRAX SLIC DUAL NEG 500A MS013	0
VK104MK151R017P050 KEMET	VARISTOR 27V 150A RADIAL	0
GMOV-14D321K J.W. Miller / Bourns	GMOV 14MM, 320VRMS	145
VK103MK151R035P050 KEMET	VARISTOR 56V 150A RADIAL	0
VK105MK151R017P050 KEMET	VARISTOR 27V 150A RADIAL	0
LVM2P-075R14431 Wickmann / Littelfuse	2PRO AC RADIAL .75A	2000
ADG467BR Analog Devices, Inc.	OCTAL CHANNEL PROTECTOR	195
VK105MK151R035P050 KEMET	VARISTOR 56V 150A RADIAL	0
SDP0900Q38CB Wickmann / Littelfuse	SIDACTOR BI 90V 500A QFN 5X6 8L	0
TL7726CDE4 Texas Instruments	IC HEX CLAMPING CIRCUITS 8-SOIC	0
P1701CA2LRP Wickmann / Littelfuse	SIDACTOR SLIC UNI 160V 50A DO214	0
1840-12-A3 J.W. Miller / Bourns	SURGE PROTECTION DEVICE 12V	0
SN65240PG4 Texas Instruments	IC USB TRANSIENT SUPP 8-DIP	0
SP720ABG Wickmann / Littelfuse	TVS ARRAY ESD 14CH 30V 16-SOIC	136797680

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Silicon-Polymer Hybrid TVS	Combines fast silicon diode response with polymer self-recovery capability	USB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVS	Stacked silicon layers for multi-stage voltage clamping	Industrial power supplies, 5G base stations
Glass-Passivated Hybrid TVS	Hermetic glass encapsulation with integrated RC filtering	Automotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
Passivation layer: Borosilicate glass or polymer composite
Electrode system: Multi-fingered aluminum-copper hybrid metallization
Thermal management: Embedded graphite heat spreader
Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

Parameter	Importance
Breakdown Voltage (Vbr)	Determines protection threshold for normal operation
Clamping Voltage (Vc)	Defines maximum voltage transmitted to protected circuit
Response Time (tr)	Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)	Indicates energy absorption capability during transients
Capacitance (Cj)	Critical for high-speed signal integrity preservation
Operating Temperature	Defines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

Telecommunications: 5G NR base stations, optical transceivers
Industrial Automation: PLC systems, motor drives
Automotive Electronics: CAN-FD interfaces, LiDAR systems
Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Littelfuse	SMxxxHCA Series	40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronics	TVSH Series	Automotive qualified, AEC-Q101 certified, 300W peak power
Bourns	PGB1 Series	Multi-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

Match breakdown voltage to system operating voltage (typically 10-15% margin)
Verify clamping voltage compatibility with protected IC's maximum ratings
Consider parasitic capacitance for high-speed (>1Gbps) applications
Evaluate thermal derating curves for intended operating environment
Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

Integration of AI-based predictive protection algorithms
Development of 3D-printed nanocomposite TVS structures
Adoption of wafer-level packaging for 0.1pF capacitance levels
Implementation of energy recovery features in hybrid architectures
Advancements in terahertz transient suppression materials