TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
DLTS13CA

DLTS13CA

Microsemi

TVS DIODE 13V 20.6V 16DIP

0

SMCG6052E3/TR13

SMCG6052E3/TR13

Microsemi

TVS DIODE 29V 52V DO215AB

0

DLTS24

DLTS24

Microsemi

TVS DIODE 24V 42.3V 16DIP

0

SMCG6053/TR13

SMCG6053/TR13

Microsemi

TVS DIODE 31V 56.4V DO215AB

0

SMCG6055E3/TR13

SMCG6055E3/TR13

Microsemi

TVS DIODE 38V 67.8V DO215AB

0

DLTS19C

DLTS19C

Microsemi

TVS DIODE 19V 34.2V 16DIP

0

SMCG6060AE3/TR13

SMCG6060AE3/TR13

Microsemi

TVS DIODE 64V 103V DO215AB

0

SMCG6043AE3/TR13

SMCG6043AE3/TR13

Microsemi

TVS DIODE 12V 21.2V DO215AB

0

SMCG6057E3/TR13

SMCG6057E3/TR13

Microsemi

TVS DIODE 45V 80.5V DO215AB

0

SMCG6060A/TR13

SMCG6060A/TR13

Microsemi

TVS DIODE 64V 103V DO215AB

0

SMCG6041/TR13

SMCG6041/TR13

Microsemi

TVS DIODE 9V 17.3V DO215AB

0

DLTS30C

DLTS30C

Microsemi

TVS DIODE 30V 52.8V 16DIP

0

SMCG6042/TR13

SMCG6042/TR13

Microsemi

TVS DIODE 10V 19V DO215AB

0

SMCG6046/TR13

SMCG6046/TR13

Microsemi

TVS DIODE 16V 29.1V DO215AB

0

SMCG6037A/TR13

SMCG6037A/TR13

Microsemi

TVS DIODE 7V 12.1V DO215AB

0

MXPLAD30KP300AE3

MXPLAD30KP300AE3

Microsemi

TVS DIODE 300V 483V PLAD

0

SMCG6045/TR13

SMCG6045/TR13

Microsemi

TVS DIODE 14V 26.5V DO215AB

0

MXPLAD30KP400AE3

MXPLAD30KP400AE3

Microsemi

TVS DIODE 400V 644V PLAD

0

SMCG6036/TR13

SMCG6036/TR13

Microsemi

TVS DIODE 5.5V 11.7V DO215AB

0

SMCG6048E3/TR13

SMCG6048E3/TR13

Microsemi

TVS DIODE 19V 34.7V DO215AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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