TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMCG6048AE3/TR13

SMCG6048AE3/TR13

Microsemi

TVS DIODE 20V 33.2V DO215AB

0

SMCG6053E3/TR13

SMCG6053E3/TR13

Microsemi

TVS DIODE 31V 56.4V DO215AB

0

SMCG6059A/TR13

SMCG6059A/TR13

Microsemi

TVS DIODE 58V 92V DO215AB

0

MXPLAD30KP350A

MXPLAD30KP350A

Microsemi

TVS DIODE 350V 564V PLAD

0

SMCG6036E3/TR13

SMCG6036E3/TR13

Microsemi

TVS DIODE 5.5V 11.7V DO215AB

0

SMCG6039A/TR13

SMCG6039A/TR13

Microsemi

TVS DIODE 8.5V 14.5V DO215AB

0

SMCG6043E3/TR13

SMCG6043E3/TR13

Microsemi

TVS DIODE 11V 22V DO215AB

0

SMCG6049/TR13

SMCG6049/TR13

Microsemi

TVS DIODE 21V 39.1V DO215AB

0

DLTS8C

DLTS8C

Microsemi

TVS DIODE 8V 13.4V 16DIP

0

DLTS5A

DLTS5A

Microsemi

TVS DIODE 5V 9.5V 16DIP

0

SMCG6038AE3/TR13

SMCG6038AE3/TR13

Microsemi

TVS DIODE 7.5V 13.4V DO215AB

0

SMCG6047E3/TR13

SMCG6047E3/TR13

Microsemi

TVS DIODE 17V 31.9V DO215AB

0

SMCG6056AE3/TR13

SMCG6056AE3/TR13

Microsemi

TVS DIODE 43V 70.1V DO215AB

0

SMCG6058/TR13

SMCG6058/TR13

Microsemi

TVS DIODE 48V 89V DO215AB

0

MXPLAD30KP280AE3

MXPLAD30KP280AE3

Microsemi

TVS DIODE 280V 451V PLAD

0

SMCG6046E3/TR13

SMCG6046E3/TR13

Microsemi

TVS DIODE 16V 29.1V DO215AB

0

DLTS13C

DLTS13C

Microsemi

TVS DIODE 13V 22.8V 16DIP

0

DLTS30A

DLTS30A

Microsemi

TVS DIODE 30V 47.8V 16DIP

0

SMCG6056A/TR13

SMCG6056A/TR13

Microsemi

TVS DIODE 43V 70.1V DO215AB

0

DLTS8CA

DLTS8CA

Microsemi

TVS DIODE 8V 12.2V 16DIP

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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