TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMCG6050A/TR13

SMCG6050A/TR13

Microsemi

TVS DIODE 25V 41.4V DO215AB

0

SMCG6050E3/TR13

SMCG6050E3/TR13

Microsemi

TVS DIODE 24V 43.5V DO215AB

0

SMCG6052AE3/TR13

SMCG6052AE3/TR13

Microsemi

TVS DIODE 30V 49.9V DO215AB

0

SMCG6044AE3/TR13

SMCG6044AE3/TR13

Microsemi

TVS DIODE 13V 22.5V DO215AB

0

DLTS30CA

DLTS30CA

Microsemi

TVS DIODE 30V 47.8V 16DIP

0

DLTS17A

DLTS17A

Microsemi

TVS DIODE 17V 27.5V 16DIP

0

SMCG6049AE3/TR13

SMCG6049AE3/TR13

Microsemi

TVS DIODE 22V 37.5V DO215AB

0

SMCG6040/TR13

SMCG6040/TR13

Microsemi

TVS DIODE 8.5V 16.2V DO215AB

0

SMCG6040E3/TR13

SMCG6040E3/TR13

Microsemi

TVS DIODE 8.5V 16.2V DO215AB

0

SMCG6044/TR13

SMCG6044/TR13

Microsemi

TVS DIODE 12V 23.5V DO215AB

0

SMCG6054AE3/TR13

SMCG6054AE3/TR13

Microsemi

TVS DIODE 36V 59.3V DO215AB

0

SMCG6039E3/TR13

SMCG6039E3/TR13

Microsemi

TVS DIODE 8V 15V DO215AB

0

SMCG6059E3/TR13

SMCG6059E3/TR13

Microsemi

TVS DIODE 55V 98V DO215AB

0

SMCG6038A/TR13

SMCG6038A/TR13

Microsemi

TVS DIODE 7.5V 13.4V DO215AB

0

SMCG6042AE3/TR13

SMCG6042AE3/TR13

Microsemi

TVS DIODE 11V 18.2V DO215AB

0

SMCG6048/TR13

SMCG6048/TR13

Microsemi

TVS DIODE 19V 34.7V DO215AB

0

SMCG6043A/TR13

SMCG6043A/TR13

Microsemi

TVS DIODE 12V 21.2V DO215AB

0

SMCG6056/TR13

SMCG6056/TR13

Microsemi

TVS DIODE 41V 73.5V DO215AB

0

SMCG6054/TR13

SMCG6054/TR13

Microsemi

TVS DIODE 34V 61.9V DO215AB

0

DLTS12A

DLTS12A

Microsemi

TVS DIODE 12V 19.1V 16DIP

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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