TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MXSMBG2K3.3

MXSMBG2K3.3

Microsemi

TVS DIODE 3.3V 5.8V DO215AA

0

MXLP5KE40CAE3

MXLP5KE40CAE3

Microsemi

TVS DIODE 40V 64.5V DO204AL

0

MXLP5KE9.0CA

MXLP5KE9.0CA

Microsemi

TVS DIODE 9V 15.4V DO204AL

0

MASMBJ2K4.5E3

MASMBJ2K4.5E3

Microsemi

TVS DIODE 4.5V 6.6V DO214AA

0

MXLSMBG2K4.0E3

MXLSMBG2K4.0E3

Microsemi

TVS DIODE 4V 6.3V DO215AA

0

MXLP5KE75CAE3

MXLP5KE75CAE3

Microsemi

TVS DIODE 75V 121V DO204AL

0

MXP5KE6.0CAE3

MXP5KE6.0CAE3

Microsemi

TVS DIODE 6V 10.3V DO204AL

0

MP5KE9.0AE3

MP5KE9.0AE3

Microsemi

TVS DIODE 9V 15.4V DO204AL

0

MP5KE45A

MP5KE45A

Microsemi

TVS DIODE 45V 72.7V DO204AL

0

SMCJ6055A/TR13

SMCJ6055A/TR13

Microsemi

TVS DIODE 40V 64.8V DO214AB

0

SMCJ5642E3/TR13

SMCJ5642E3/TR13

Microsemi

TVS DIODE 19.4V 34.7V DO214AB

0

MMAD1103E3

MMAD1103E3

Microsemi

TVS DIODE 75V 14SOIC

0

MP5KE22CA

MP5KE22CA

Microsemi

TVS DIODE 22V 35.5V DO204AL

0

MXP5KE11AE3

MXP5KE11AE3

Microsemi

TVS DIODE 11V 18.2V DO204AL

0

SMCJ5657AE3/TR13

SMCJ5657AE3/TR13

Microsemi

TVS DIODE 85.5V 137V DO214AB

0

MXLP5KE36AE3

MXLP5KE36AE3

Microsemi

TVS DIODE 36V 58.1V DO204AL

0

MASMBJ2K3.0E3

MASMBJ2K3.0E3

Microsemi

TVS DIODE 3V 5.4V DO214AA

0

SMCJ5647A/TR13

SMCJ5647A/TR13

Microsemi

TVS DIODE 33.3V 53.9V DO214AB

0

SM16LC08C/TR13

SM16LC08C/TR13

Microsemi

TVS DIODE 8V 13.4V 16SO

0

SMCJ5639AE3/TR13

SMCJ5639AE3/TR13

Microsemi

TVS DIODE 15.3V 25.2V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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