TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMCJ6040AE3/TR13

SMCJ6040AE3/TR13

Microsemi

TVS DIODE 9V 15.6V DO214AB

0

SMCJ6048A/TR13

SMCJ6048A/TR13

Microsemi

TVS DIODE 20V 33.2V DO214AB

0

MAP5KE60CAE3

MAP5KE60CAE3

Microsemi

TVS DIODE 60V 96.8V DO204AL

0

SMCJ5640/TR13

SMCJ5640/TR13

Microsemi

TVS DIODE 16.2V 29.1V DO214AB

0

MP5KE75CA

MP5KE75CA

Microsemi

TVS DIODE 75V 121V DO204AL

0

MXLP5KE78AE3

MXLP5KE78AE3

Microsemi

TVS DIODE 78V 126V DO204AL

0

JANTX1N6114US

JANTX1N6114US

Microsemi

TVS DIODE 16.7V 32.03V B SQ-MELF

0

MXLP5KE15CAE3

MXLP5KE15CAE3

Microsemi

TVS DIODE 15V 24.4V DO204AL

0

MP5KE60CA

MP5KE60CA

Microsemi

TVS DIODE 60V 96.8V DO204AL

0

MP5KE43A

MP5KE43A

Microsemi

TVS DIODE 43V 69.4V DO204AL

0

1.5KE12AE3/TR13

1.5KE12AE3/TR13

Microsemi

TVS DIODE 10.22V 16.7V CASE-1

0

MXLP5KE9.0AE3

MXLP5KE9.0AE3

Microsemi

TVS DIODE 9V 15.4V DO204AL

0

MXLP5KE8.0A

MXLP5KE8.0A

Microsemi

TVS DIODE 8V 13.6V DO204AL

0

MXP5KE18AE3

MXP5KE18AE3

Microsemi

TVS DIODE 18V 29.2V DO204AL

0

MXP5KE14CA

MXP5KE14CA

Microsemi

TVS DIODE 14V 23.2V DO204AL

0

SMCJ6057E3/TR13

SMCJ6057E3/TR13

Microsemi

TVS DIODE 45V 80.5V DO214AB

0

MXSMBJ2K5.0

MXSMBJ2K5.0

Microsemi

TVS DIODE 5V 7.6V DO214AA

0

SMCJ6065E3/TR13

SMCJ6065E3/TR13

Microsemi

TVS DIODE 95V 176V DO214AB

0

MP5KE100AE3

MP5KE100AE3

Microsemi

TVS DIODE 100V 162V DO204AL

0

1.5KE47AE3/TR13

1.5KE47AE3/TR13

Microsemi

TVS DIODE 40.2V 64.8V CASE-1

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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