TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MP5KE43CA

MP5KE43CA

Microsemi

TVS DIODE 43V 69.4V DO204AL

0

MAP5KE5.0CA

MAP5KE5.0CA

Microsemi

TVS DIODE 5V 9.2V DO204AL

0

MAP5KE150AE3

MAP5KE150AE3

Microsemi

TVS DIODE 150V 243V DO204AL

0

SMCJ6054AE3/TR13

SMCJ6054AE3/TR13

Microsemi

TVS DIODE 36V 59.3V DO214AB

0

MXLP5KE6.5CAE3

MXLP5KE6.5CAE3

Microsemi

TVS DIODE 6.5V 11.2V DO204AL

0

MXLSMBG2K3.3E3

MXLSMBG2K3.3E3

Microsemi

TVS DIODE 3.3V 5.8V DO215AA

0

SMCJ6051E3/TR13

SMCJ6051E3/TR13

Microsemi

TVS DIODE 26V 47.7V DO214AB

0

SMCJ5659AE3/TR13

SMCJ5659AE3/TR13

Microsemi

TVS DIODE 102V 165V DO214AB

0

MXP5KE75AE3

MXP5KE75AE3

Microsemi

TVS DIODE 75V 121V DO204AL

0

MMAD130/TR13

MMAD130/TR13

Microsemi

TVS DIODE 75V 14SOIC

0

MPLAD6.5KP51CA

MPLAD6.5KP51CA

Microsemi

TVS DIODE 51V 82.4V PLAD

0

MP5KE58AE3

MP5KE58AE3

Microsemi

TVS DIODE 58V 93.6V DO204AL

0

SMCJ5655AE3/TR13

SMCJ5655AE3/TR13

Microsemi

TVS DIODE 70.1V 113V DO214AB

0

MAP5KE64AE3

MAP5KE64AE3

Microsemi

TVS DIODE 64V 103V DO204AL

0

MXLP5KE18CA

MXLP5KE18CA

Microsemi

TVS DIODE 18V 29.2V DO204AL

0

SMCJ6066E3/TR13

SMCJ6066E3/TR13

Microsemi

TVS DIODE 105V 191V DO214AB

0

MSMBJ2K3.3E3

MSMBJ2K3.3E3

Microsemi

TVS DIODE 3.3V 5.8V DO214AA

0

SMCJ6070/TR13

SMCJ6070/TR13

Microsemi

TVS DIODE 155V 292V DO214AB

0

SMCJ5649/TR13

SMCJ5649/TR13

Microsemi

TVS DIODE 38.1V 67.8V DO214AB

0

SMCJ5653E3/TR13

SMCJ5653E3/TR13

Microsemi

TVS DIODE 55.1V 98V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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