TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SM05/TR7

SM05/TR7

Microsemi

TVS DIODE 5V 9.8V SOT23-3

8

SM16LC12C

SM16LC12C

Microsemi

TVS DIODE 12V 24V 16SO

118

P6KE91AE3/TR13

P6KE91AE3/TR13

Microsemi

TVS DIODE 77.8V 125V AXIAL

848

SMCG6057A/TR13

SMCG6057A/TR13

Microsemi

TVS DIODE 47V 77V DO215AB

0

DLTS19CA

DLTS19CA

Microsemi

TVS DIODE 19V 31V 16DIP

0

SMCG6043/TR13

SMCG6043/TR13

Microsemi

TVS DIODE 11V 22V DO215AB

0

SMCG6051AE3/TR13

SMCG6051AE3/TR13

Microsemi

TVS DIODE 28V 45.7V DO215AB

0

SMCG6057/TR13

SMCG6057/TR13

Microsemi

TVS DIODE 45V 80.5V DO215AB

0

SMCG6053A/TR13

SMCG6053A/TR13

Microsemi

TVS DIODE 33V 53.9V DO215AB

0

MXPLAD30KP220AE3

MXPLAD30KP220AE3

Microsemi

TVS DIODE 220V 356V PLAD

0

SMCG6042E3/TR13

SMCG6042E3/TR13

Microsemi

TVS DIODE 10V 19V DO215AB

0

SMCG6041A/TR13

SMCG6041A/TR13

Microsemi

TVS DIODE 10V 16.7V DO215AB

0

SMCG6044A/TR13

SMCG6044A/TR13

Microsemi

TVS DIODE 13V 22.5V DO215AB

0

SMCG6055/TR13

SMCG6055/TR13

Microsemi

TVS DIODE 38V 67.8V DO215AB

0

SMCG6055A/TR13

SMCG6055A/TR13

Microsemi

TVS DIODE 40V 64.8V DO215AB

0

SMCG6052A/TR13

SMCG6052A/TR13

Microsemi

TVS DIODE 30V 49.9V DO215AB

0

DLTS5

DLTS5

Microsemi

TVS DIODE 5V 10.2V 16DIP

0

SMCG6050/TR13

SMCG6050/TR13

Microsemi

TVS DIODE 24V 43.5V DO215AB

0

SMCG6047A/TR13

SMCG6047A/TR13

Microsemi

TVS DIODE 18V 30.6V DO215AB

0

SMCG6060/TR13

SMCG6060/TR13

Microsemi

TVS DIODE 60V 108V DO215AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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