TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
PESD3V3V4UF,115

PESD3V3V4UF,115

NXP Semiconductors

TVS DIODE

6568

PESD5V0V1USF,315

PESD5V0V1USF,315

NXP Semiconductors

TVS DIODE 5V DSN0603-2

1780218

PTVS45VP1UTP,115

PTVS45VP1UTP,115

NXP Semiconductors

NOW NEXPERIA PTVS45VP1UTP - TRAN

54000

PRTR5V0U4AD,125

PRTR5V0U4AD,125

NXP Semiconductors

TVS DIODE 5.5V 6TSOP

39000

BZA868AL,115

BZA868AL,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

16373

PTVS34VP1UTP

PTVS34VP1UTP

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

0

PESD5V0S1UA/ZL115

PESD5V0S1UA/ZL115

NXP Semiconductors

TVS DIODE

318000

IP4283CZ10-TB,115

IP4283CZ10-TB,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

179800

PESD5V0X2UAMB315

PESD5V0X2UAMB315

NXP Semiconductors

TVS DIODE

1435019

IP4280CZ10,118

IP4280CZ10,118

NXP Semiconductors

TVS DIODE 5.5V 8V 10TSSOP

11625

PTVS9V0V9115

PTVS9V0V9115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

0

BZA862AL,115

BZA862AL,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

23108

PESD5V0U4BF,115

PESD5V0U4BF,115

NXP Semiconductors

NOW NEXPERIA PESD5V0U4BF - TRANS

1280000

IP4284CZ10-TT,118

IP4284CZ10-TT,118

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

27500

PUSB2X4D125

PUSB2X4D125

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

203000

PTVS8V5S1UTR,115

PTVS8V5S1UTR,115

NXP Semiconductors

NOW NEXPERIA PTVS8V5S1UTR - TRAN

15000

PTVS22VP1UTP,115

PTVS22VP1UTP,115

NXP Semiconductors

NOW NEXPERIA PTVS22VP1UTP - TRAN

17455

IP4060CX16/LF,135

IP4060CX16/LF,135

NXP Semiconductors

IP4060CX16 - DATA LINE FILTER

3500

PTVS12VU1UPAZ

PTVS12VU1UPAZ

NXP Semiconductors

NOW NEXPERIA PTVS12VU1UPAZ - TRA

3480

BZA862A,115

BZA862A,115

NXP Semiconductors

TVS DIODE 6.2V SOT353

36612

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
RFQ BOM Call Skype Email
Top