TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
IP4284CZ10-TBR,115

IP4284CZ10-TBR,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE,

23382

IP4309CX9,135

IP4309CX9,135

NXP Semiconductors

IP4309CX9 - DATA LINE FILTER

35989

PESD5V0V2BM315

PESD5V0V2BM315

NXP Semiconductors

TVS DIODE

1730000

BZA418A,165

BZA418A,165

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

0

PESD12VS2UQ/S911115

PESD12VS2UQ/S911115

NXP Semiconductors

TVS DIODE

72000

PTVS7V0S1UTR,115

PTVS7V0S1UTR,115

NXP Semiconductors

NOW NEXPERIA PTVS7V0S1UTR - TRAN

6933

MMBZ27VAL/DG/B2235

MMBZ27VAL/DG/B2235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

50000

PTVS11VP1UTP,115

PTVS11VP1UTP,115

NXP Semiconductors

NOW NEXPERIA PTVS11VP1UTP - TRAN

8944

IP4282CZ6115

IP4282CZ6115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

1837684

PRTR5VOU2X,215

PRTR5VOU2X,215

NXP Semiconductors

ULTRA LOW CAPACITANCE DOUBLE RAI

0

PESD3V3L5U115

PESD3V3L5U115

NXP Semiconductors

TVS DIODE

28000

PESD5V0C1USF315

PESD5V0C1USF315

NXP Semiconductors

TVS DIODE

54000

BZA968AVL,115

BZA968AVL,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

15579

PESD5V0R1BSF315

PESD5V0R1BSF315

NXP Semiconductors

TVS DIODE

3314920

PESD5V0V2BMB315

PESD5V0V2BMB315

NXP Semiconductors

TVS DIODE

0

PTVS26VU1UPA147

PTVS26VU1UPA147

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

2106000

PESD24VF1BSF315

PESD24VF1BSF315

NXP Semiconductors

TVS DIODE

300000

IP4285CZ9-TBB,115

IP4285CZ9-TBB,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

346486

BZA956AVL,115

BZA956AVL,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

242733

PESD9X7.0L,315

PESD9X7.0L,315

NXP Semiconductors

TVS DIODE

25685

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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