TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
PTVS8V0S1UTR,115

PTVS8V0S1UTR,115

NXP Semiconductors

NOW NEXPERIA PTVS8V0S1UTR - TRAN

6000

PRTR5V0U8S,118

PRTR5V0U8S,118

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

0

PESD5V0S1BSF/S500315

PESD5V0S1BSF/S500315

NXP Semiconductors

TVS DIODE

121000

PTVS8V0P1UTP

PTVS8V0P1UTP

NXP Semiconductors

NOW NEXPERIA PTVS8V0P1UTP - TRAN

0

IP4043CX5/LF135

IP4043CX5/LF135

NXP Semiconductors

CONSUMER CIRCUIT

26500

PTVS10VU1UPA147

PTVS10VU1UPA147

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

0

IP4281CZ10115

IP4281CZ10115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

50000

PTVS7V5P1UP

PTVS7V5P1UP

NXP Semiconductors

NOW NEXPERIA PTVS7V5P1UP - TRANS

0

IP4385CX4/LF,135

IP4385CX4/LF,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

368373

IP4059CX5/LF,135

IP4059CX5/LF,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

34540

PESD5V0V4UF,115

PESD5V0V4UF,115

NXP Semiconductors

TVS DIODE 5V 13V 6XSON

173475

PESD5V0G1BL315

PESD5V0G1BL315

NXP Semiconductors

TVS DIODE

10000

PESD15VS4UD,115

PESD15VS4UD,115

NXP Semiconductors

NOW NEXPERIA PESD15VS4UD - TRANS

0

PESD5V0X1BCSF315

PESD5V0X1BCSF315

NXP Semiconductors

TVS DIODE

2007000

PESD5V0X2UMB315

PESD5V0X2UMB315

NXP Semiconductors

TVS DIODE

2400836

PRTR5V0U1T,215

PRTR5V0U1T,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

16785

PTVS14VP1UTP,115

PTVS14VP1UTP,115

NXP Semiconductors

NOW NEXPERIA PTVS14VP1UTP - TRAN

540000

PRTR5V0U2AX/DG/B2215

PRTR5V0U2AX/DG/B2215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

12000

PRTR5V0U4D/S911125

PRTR5V0U4D/S911125

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

15000

BZA862A/DG/B2115

BZA862A/DG/B2115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

195000

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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