TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
DF3A3.6FV(TPL3,Z)

DF3A3.6FV(TPL3,Z)

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 1.8V VESM

17586

DF2B7AFS,L3M

DF2B7AFS,L3M

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5.5V 20V SOD923

2265

DF3A5.6CT(TPL3)

DF3A5.6CT(TPL3)

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 2.5V CST3

0

DF3A6.2FUTE85LF

DF3A6.2FUTE85LF

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 3VWM USM

0

DF2S8.2FS,L3M

DF2S8.2FS,L3M

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 6.5V SOD923

8718

DF2B6.8AFS,L3M

DF2B6.8AFS,L3M

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5V 7V FSC

82465

DF2S20CT,L3F

DF2S20CT,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 15V CST2

17866

DF6D7M1N,LF

DF6D7M1N,LF

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5V 12V 6DFN

0

DF2S30CT,L3F

DF2S30CT,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 23V CST2

8974

DF5A5.6FUTE85LF

DF5A5.6FUTE85LF

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 2.5V USV

3215

DF2S12FU,H3F

DF2S12FU,H3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 9V USC

14

DF2S23P2FU,H3F

DF2S23P2FU,H3F

Toshiba Electronic Devices and Storage Corporation

UNI-DIRECTIONAL ESD PROTECTION D

2480

DF2S5.6FS,L3M

DF2S5.6FS,L3M

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 3.5V SOD923

0

DF3D6.8MS,LF

DF3D6.8MS,LF

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5VWM 11VC

6483

DF2B5M5SL,L3F

DF2B5M5SL,L3F

Toshiba Electronic Devices and Storage Corporation

BI-DIRECTIONAL ESD PROTECTION DI

5906

DF2S5.6CT,L3F

DF2S5.6CT,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 3.5V CST2

19112

DF2S6P2CTC,L3F

DF2S6P2CTC,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5.5VWM CST2C

4821

DF3A5.6F,LF

DF3A5.6F,LF

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 2.5V S-MINI

0

DF3A3.3FV,L3F

DF3A3.3FV,L3F

Toshiba Electronic Devices and Storage Corporation

UNIDIRECTIONAL ESD DIODE 2 LINES

19673

DF5G6M4N,LF

DF5G6M4N,LF

Toshiba Electronic Devices and Storage Corporation

BIDIRECTIONAL ESD DIODE 4 LINES,

4606

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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