TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
CUZ20V,H3F

CUZ20V,H3F

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:20V PD:0.2W

0

MSZ8V2,LF

MSZ8V2,LF

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:8.2V PD:0.2W

0

CUZ8V2,H3F

CUZ8V2,H3F

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:8.2V PD:0.2W

0

CUZ24V,H3F

CUZ24V,H3F

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:24V PD:0.2W

0

DF2S6M4CT,L3F

DF2S6M4CT,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5.5V 15V CST2

10675

DF5A5.6LJE,LM

DF5A5.6LJE,LM

Toshiba Electronic Devices and Storage Corporation

UNIDIRECTIONAL ESD DIODE 4 LINES

6737

CUZ6V2,H3F

CUZ6V2,H3F

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:6.2V PD:0.2W

0

DF2B6M4SL,L3F

DF2B6M4SL,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5.5V 25V SL2

10695

DF2S6.8ASL,L3F

DF2S6.8ASL,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5VWM SL2-2

10954

DF2B5M4CT,L3F

DF2B5M4CT,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 3.6V 15V CST2

25601

DF2S20FS,L3M

DF2S20FS,L3M

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 15V SOD923

4094

DF5A6.2F(TE85L,F)

DF5A6.2F(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 3VWM SMV

162

DF5A6.8FUTE85LF

DF5A6.8FUTE85LF

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5VWM USV

0

DF2S16CT,L3F

DF2S16CT,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 12V CST2

1082

DF5A5.6LFU(TE85L,F

DF5A5.6LFU(TE85L,F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 3.5V USV

9002

DF10G7M1N,LF

DF10G7M1N,LF

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5V 12V 10DFN

0

MUZ36V,LF

MUZ36V,LF

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:36V PD:0.15W

0

DF2B7BSL,L3F

DF2B7BSL,L3F

Toshiba Electronic Devices and Storage Corporation

BI-DIRECTIONAL ESD PROTECTION DI

19990

DF5A6.8JE,LM

DF5A6.8JE,LM

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5V ESV

0

DF2B6.8ACT,L3F

DF2B6.8ACT,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5V 7V CST2

12518

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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