TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
DF2B6M4ASL,L3F

DF2B6M4ASL,L3F

Toshiba Electronic Devices and Storage Corporation

BI-DIRECTIONAL SINGLE ESD PROTEC

9183

DF2S8.2ASL,L3F

DF2S8.2ASL,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 6.5V SL2

49

DF5A5.6CFUTE85LF

DF5A5.6CFUTE85LF

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 3.5V USV

0

DF6D6M4N,LF

DF6D6M4N,LF

Toshiba Electronic Devices and Storage Corporation

X34 ESD PROTECTION DIODE (BI-DIR

3836

DF5A3.6F(TE85L,F)

DF5A3.6F(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 1VWM SMV

1823

DF2B7AFU,H3F

DF2B7AFU,H3F

Toshiba Electronic Devices and Storage Corporation

BIDIRECTIONAL ESD DIODE VRWM=+/-

5370

DF2S5M4CT,L3F

DF2S5M4CT,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 3.6V 15V CST2

42739

DF3D36FU,LF

DF3D36FU,LF

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 28V USM

7514

DF6D5M4N,LF

DF6D5M4N,LF

Toshiba Electronic Devices and Storage Corporation

X34 ESD PROTECTION DIODE (BI-DIR

1997

DF5A6.2CFU(TE85L,F

DF5A6.2CFU(TE85L,F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5VWM USV

1890

CEZ6V2,L3F

CEZ6V2,L3F

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:6.2V PD:0.15W

0

MSZ36V,LF

MSZ36V,LF

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:36V PD:0.2W

0

DF3D29FU,LF

DF3D29FU,LF

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 24V 47V USM

28

CUZ5V6,H3F

CUZ5V6,H3F

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:5.6V PD:0.2W

0

DF5A3.3FU(TE85L,F)

DF5A3.3FU(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 1VWM USV

0

MSZ24V,LF

MSZ24V,LF

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:24V PD:0.2W

0

MUZ24V,LF

MUZ24V,LF

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:24V PD:0.15W

0

DF2B7ASL,L3F

DF2B7ASL,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5.5V 20V SL2

8872

DF2B12M1CT(TPL3)

DF2B12M1CT(TPL3)

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 8V 18V CST2

0

DF2B20M4SL,L3F

DF2B20M4SL,L3F

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 18.5V 30V SL2

14790

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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