Silicon Capacitors

Image Part Number Description / PDF Quantity Rfq
935154522310-W0T

935154522310-W0T

TOKO / Murata

ULTRA LARGE BAND VERTICAL WIREBO

0

9047RK

9047RK

Metelics (MACOM Technology Solutions)

CAP SILICON 47PF 10% 50V SMD

800

935152722410-T3S

935152722410-T3S

TOKO / Murata

ULTRA BROADBAND LOW PROFILE SILI

0

935146632410-W0T

935146632410-W0T

TOKO / Murata

VERTICAL WIREBOND LOW PROFILE SI

0

939114722410-T3S

939114722410-T3S

TOKO / Murata

BROADBAND LOW PROFILE SILICON CA

0

935146521310-T3T

935146521310-T3T

TOKO / Murata

VERTICAL WIREBOND LOW PROFILE SI

0

935157725410-W0A

935157725410-W0A

TOKO / Murata

ULTRA BROADBAND EMBEDDING/WIRE B

0

935174730410-T3A

935174730410-T3A

TOKO / Murata

AUTOMOTIVE SI CAP 1NF , -55/+200

0

935142831510-T3T

935142831510-T3T

TOKO / Murata

VERTICAL WIREBOND SILICON CAPACI

0

939114722456-T3S

939114722456-T3S

TOKO / Murata

BROADBAND LOW PROFILE SILICON CA

0

9010RK

9010RK

Metelics (MACOM Technology Solutions)

CAP SILICON 10PF 10% 50V SMD

0

935153521310-T3T

935153521310-T3T

TOKO / Murata

ULTRA LARGE BAND VERTICAL WIREBO

0

935157425510-W0A

935157425510-W0A

TOKO / Murata

ULTRA BROADBAND EMBEDDING/WIRE B

0

935152424610-T3N

935152424610-T3N

TOKO / Murata

ULTRA BROADBAND LOW PROFILE SILI

0

935174733610-T3A

935174733610-T3A

TOKO / Murata

AUTOMOTIVE SI CAP 100NF , -55/+2

0

90100RK

90100RK

Metelics (MACOM Technology Solutions)

CAP SILICON 100PF 10% 50V SMD

400

935153630510-T3T

935153630510-T3T

TOKO / Murata

ULTRA LARGE BAND VERTICAL WIREBO

0

939118722456-T3S

939118722456-T3S

TOKO / Murata

XTREM BROADBAND LOW PROFILE SILI

0

935154632410-W0T

935154632410-W0T

TOKO / Murata

CAP SILICON 1000PF 50V SMD

0

935152492510-T3S

935152492510-T3S

TOKO / Murata

ULTRA BROADBAND LOW PROFILE SILI

0

Silicon Capacitors

1. Overview

Silicon capacitors are a class of capacitors fabricated using silicon-based materials and semiconductor processes. They offer high capacitance density, excellent temperature stability, and low equivalent series resistance (ESR). These capacitors are critical in modern electronics for applications requiring miniaturization, high reliability, and performance in extreme environments. Their integration with silicon wafers enables compatibility with advanced IC manufacturing processes, making them essential in RF circuits, power management, and high-frequency systems.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Metal-Insulator-Metal (MIM) Silicon Capacitors High linearity, low parasitic inductance, stable over temperature RF ICs, analog circuits, decoupling in SoCs
Polysilicon Capacitors High-temperature endurance, moderate capacitance density Automotive sensors, industrial control systems
Trench Silicon Capacitors High capacitance per unit area, low leakage current Power management ICs, DC-DC converters
Superjunction Silicon Capacitors Ultra-low ESR, high ripple current tolerance High-frequency power supplies, 5G base stations

3. Structure and Composition

A typical silicon capacitor consists of: - Silicon Substrate: Monocrystalline or polycrystalline silicon wafer serving as a base. - Dielectric Layer: Silicon dioxide (SiO ) or silicon nitride (Si N ) for insulation. - Electrodes: Aluminum, copper, or doped polysilicon layers deposited via sputtering or electroplating. - Passivation Layer: Silicon carbide (SiC) or epoxy coating to prevent environmental damage. The structure is optimized for minimal parasitic effects and integration with CMOS processes.

4. Key Technical Specifications

Parameter Description Importance
Capacitance Range 0.1 pF to 100 F Determines charge storage capability
Voltage Rating 2.5V to 100V Defines safe operating limits
Tolerance 1% to 20% Affects circuit precision
Temperature Coefficient 50 ppm/ C to 500 ppm/ C Stability over temperature variations
ESR (Equivalent Series Resistance) 1 m to 50 m Impacts high-frequency performance
Operating Temperature -55 C to +150 C Defines environmental robustness

5. Application Fields

  • Consumer Electronics: Smartphones (RF filters), laptops (power decoupling).
  • Telecommunications: 5G base stations (high-frequency bypass capacitors).
  • Automotive: Engine control units (ECUs), LiDAR systems.
  • Industrial: Motor drives (snubber circuits), solar inverters.
  • Aerospace: Satellite power systems, avionics.

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Features
Murata Manufacturing SiC-HP Series High-temperature stability for automotive applications
TDK Corporation CGA Silicon MLCC MIM structure for 5G RF front-ends
Vishay Intertechnology VJ HIFREQ Silicon Ultra-low ESR for high-frequency power circuits
Infineon Technologies OptiMOS Trench Capacitor Integrated with MOSFETs for energy efficiency

7. Selection Guidelines

Consider the following factors: - Capacitance and Voltage Requirements: Match ratings to circuit specifications. - Frequency Response: Prioritize low ESR for high-frequency applications. - Environmental Conditions: Select temperature ratings for automotive/aerospace use. - Package Size: Use chip-scale packages for space-constrained designs. - Cost vs. Performance: Balance precision (tight tolerance) with budget constraints.

8. Industry Trends

Key trends shaping silicon capacitors include: - **Advanced Packaging:** 3D stacking and through-silicon vias (TSVs) for higher integration. - **Material Innovations:** Adoption of hafnium oxide (HfO ) for higher dielectric constants. - **Miniaturization:** Sub-micron trench structures for mobile devices. - **High-Temperature Performance:** Growth in EV and renewable energy systems requiring thermal resilience. - **Green Manufacturing:** Reduction of hazardous materials in fabrication processes.

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