Silicon Capacitors

Image Part Number Description / PDF Quantity Rfq
SC02201518

SC02201518

Skyworks Solutions, Inc.

CAP SILICON 22PF 20% SMD

1000

SC00821518

SC00821518

Skyworks Solutions, Inc.

CAP SILICON 8.2PF 20% SMD

1900

MBC50-3B12

MBC50-3B12

Metelics (MACOM Technology Solutions)

CAP SILICON 3PF 20% 50V SMD

400750

911R5K

911R5K

Metelics (MACOM Technology Solutions)

CAP SILICON 1.5PF 10% SMD

400

SC00820710

SC00820710

Skyworks Solutions, Inc.

CAP SILICON 8.2PF 20% SMD

2600

SC01000710

SC01000710

Skyworks Solutions, Inc.

CAP SILICON 10PF 20% SMD

1700

MBC50-22B12

MBC50-22B12

Metelics (MACOM Technology Solutions)

CAP SILICON 22PF 20% 50V SMD

250

SC06801518

SC06801518

Skyworks Solutions, Inc.

CAP SILICON 68PF 20% SMD

2300

910R3J

910R3J

Metelics (MACOM Technology Solutions)

CAP SILICON 0.3PF 5% SMD

500

935157725456-W0A

935157725456-W0A

TOKO / Murata

ULTRA BROADBAND EMBEDDING/WIRE B

0

905R0K

905R0K

Metelics (MACOM Technology Solutions)

CAP SILICON 5PF 10% 50V SMD

0

935152783522-T3N

935152783522-T3N

TOKO / Murata

ULTRA BROADBAND LOW PROFILE SILI

0

935154832410-W0T

935154832410-W0T

TOKO / Murata

ULTRA LARGE BAND VERTICAL WIREBO

0

935151424610-T3N

935151424610-T3N

TOKO / Murata

ULTRA BROADBAND SILICON CAPACITO

0

935142521410-T3T

935142521410-T3T

TOKO / Murata

VERTICAL WIREBOND SILICON CAPACI

0

939114492510-T3S

939114492510-T3S

TOKO / Murata

BROADBAND LOW PROFILE SILICON CA

0

935156722410-T3S

935156722410-T3S

TOKO / Murata

ULTRA LARGE BAND LOW PROFILE SIL

0

939114733510-T3N

939114733510-T3N

TOKO / Murata

BROADBAND LOW PROFILE SILICON CA

0

935146529315-W0T

935146529315-W0T

TOKO / Murata

VERTICAL WIREBOND LOW PROFILE SI

0

935155424610-T3N

935155424610-T3N

TOKO / Murata

ULTRA LARGE BAND SILICON CAPACIT

0

Silicon Capacitors

1. Overview

Silicon capacitors are a class of capacitors fabricated using silicon-based materials and semiconductor processes. They offer high capacitance density, excellent temperature stability, and low equivalent series resistance (ESR). These capacitors are critical in modern electronics for applications requiring miniaturization, high reliability, and performance in extreme environments. Their integration with silicon wafers enables compatibility with advanced IC manufacturing processes, making them essential in RF circuits, power management, and high-frequency systems.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Metal-Insulator-Metal (MIM) Silicon Capacitors High linearity, low parasitic inductance, stable over temperature RF ICs, analog circuits, decoupling in SoCs
Polysilicon Capacitors High-temperature endurance, moderate capacitance density Automotive sensors, industrial control systems
Trench Silicon Capacitors High capacitance per unit area, low leakage current Power management ICs, DC-DC converters
Superjunction Silicon Capacitors Ultra-low ESR, high ripple current tolerance High-frequency power supplies, 5G base stations

3. Structure and Composition

A typical silicon capacitor consists of: - Silicon Substrate: Monocrystalline or polycrystalline silicon wafer serving as a base. - Dielectric Layer: Silicon dioxide (SiO ) or silicon nitride (Si N ) for insulation. - Electrodes: Aluminum, copper, or doped polysilicon layers deposited via sputtering or electroplating. - Passivation Layer: Silicon carbide (SiC) or epoxy coating to prevent environmental damage. The structure is optimized for minimal parasitic effects and integration with CMOS processes.

4. Key Technical Specifications

Parameter Description Importance
Capacitance Range 0.1 pF to 100 F Determines charge storage capability
Voltage Rating 2.5V to 100V Defines safe operating limits
Tolerance 1% to 20% Affects circuit precision
Temperature Coefficient 50 ppm/ C to 500 ppm/ C Stability over temperature variations
ESR (Equivalent Series Resistance) 1 m to 50 m Impacts high-frequency performance
Operating Temperature -55 C to +150 C Defines environmental robustness

5. Application Fields

  • Consumer Electronics: Smartphones (RF filters), laptops (power decoupling).
  • Telecommunications: 5G base stations (high-frequency bypass capacitors).
  • Automotive: Engine control units (ECUs), LiDAR systems.
  • Industrial: Motor drives (snubber circuits), solar inverters.
  • Aerospace: Satellite power systems, avionics.

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Features
Murata Manufacturing SiC-HP Series High-temperature stability for automotive applications
TDK Corporation CGA Silicon MLCC MIM structure for 5G RF front-ends
Vishay Intertechnology VJ HIFREQ Silicon Ultra-low ESR for high-frequency power circuits
Infineon Technologies OptiMOS Trench Capacitor Integrated with MOSFETs for energy efficiency

7. Selection Guidelines

Consider the following factors: - Capacitance and Voltage Requirements: Match ratings to circuit specifications. - Frequency Response: Prioritize low ESR for high-frequency applications. - Environmental Conditions: Select temperature ratings for automotive/aerospace use. - Package Size: Use chip-scale packages for space-constrained designs. - Cost vs. Performance: Balance precision (tight tolerance) with budget constraints.

8. Industry Trends

Key trends shaping silicon capacitors include: - **Advanced Packaging:** 3D stacking and through-silicon vias (TSVs) for higher integration. - **Material Innovations:** Adoption of hafnium oxide (HfO ) for higher dielectric constants. - **Miniaturization:** Sub-micron trench structures for mobile devices. - **High-Temperature Performance:** Growth in EV and renewable energy systems requiring thermal resilience. - **Green Manufacturing:** Reduction of hazardous materials in fabrication processes.

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