Silicon Capacitors

Image Part Number Description / PDF Quantity Rfq
9122RK

9122RK

Metelics (MACOM Technology Solutions)

CAP SILICON 22PF 10% 100V SMD

1200

9112RK

9112RK

Metelics (MACOM Technology Solutions)

CAP SILICON 12PF 10% 100V SMD

400

935146521410-T3T

935146521410-T3T

TOKO / Murata

VERTICAL WIREBOND LOW PROFILE SI

0

935146832410-W0T

935146832410-W0T

TOKO / Murata

VERTICAL WIREBOND LOW PROFILE SI

0

935154634522-T3T

935154634522-T3T

TOKO / Murata

ULTRA LARGE BAND VERTICAL WIREBO

0

939114424610-T3N

939114424610-T3N

TOKO / Murata

BROADBAND LOW PROFILE SILICON CA

0

935156722456-T3S

935156722456-T3S

TOKO / Murata

ULTRA LARGE BAND LOW PROFILE SIL

0

935153521410-T3T

935153521410-T3T

TOKO / Murata

ULTRA LARGE BAND VERTICAL WIREBO

0

935146528247-W0T

935146528247-W0T

TOKO / Murata

VERTICAL WIREBOND LOW PROFILE SI

0

9115R0K-BOO

9115R0K-BOO

Metelics (MACOM Technology Solutions)

CAP SILICON 15PF 100V SMD

400

935154528247-W0T

935154528247-W0T

TOKO / Murata

ULTRA LARGE BAND VERTICAL WIREBO

0

935152722456-T3S

935152722456-T3S

TOKO / Murata

ULTRA BROADBAND LOW PROFILE SILI

0

RFCS04022200BJTTS

RFCS04022200BJTTS

Vishay

CAP SILICON 22PF 5% 10V 0402

0

RFCS04028200CJTWS

RFCS04028200CJTWS

Vishay

CAP SILICON 8.2PF 25V 0402

0

RFCS04026000DBTWS

RFCS04026000DBTWS

Vishay

CAP SILICON 0.6PF 50V 0402

0

RFCS04025600CJTWS

RFCS04025600CJTWS

Vishay

CAP SILICON 5.6PF 25V 0402

0

RFCS04028000DBTTS

RFCS04028000DBTTS

Vishay

CAP SILICON 0.8PF 50V 0402

0

RFCS04023900CJTT1

RFCS04023900CJTT1

Vishay

CAP SILICON 3.9PF 5% 25V 0402

0

RFCS04021200BJTWS

RFCS04021200BJTWS

Vishay

CAP SILICON 12PF 16V 0402

0

SC99906068

SC99906068

Skyworks Solutions, Inc.

CAP SILICON 1000PF 20% SMD

0

Silicon Capacitors

1. Overview

Silicon capacitors are a class of capacitors fabricated using silicon-based materials and semiconductor processes. They offer high capacitance density, excellent temperature stability, and low equivalent series resistance (ESR). These capacitors are critical in modern electronics for applications requiring miniaturization, high reliability, and performance in extreme environments. Their integration with silicon wafers enables compatibility with advanced IC manufacturing processes, making them essential in RF circuits, power management, and high-frequency systems.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Metal-Insulator-Metal (MIM) Silicon Capacitors High linearity, low parasitic inductance, stable over temperature RF ICs, analog circuits, decoupling in SoCs
Polysilicon Capacitors High-temperature endurance, moderate capacitance density Automotive sensors, industrial control systems
Trench Silicon Capacitors High capacitance per unit area, low leakage current Power management ICs, DC-DC converters
Superjunction Silicon Capacitors Ultra-low ESR, high ripple current tolerance High-frequency power supplies, 5G base stations

3. Structure and Composition

A typical silicon capacitor consists of: - Silicon Substrate: Monocrystalline or polycrystalline silicon wafer serving as a base. - Dielectric Layer: Silicon dioxide (SiO ) or silicon nitride (Si N ) for insulation. - Electrodes: Aluminum, copper, or doped polysilicon layers deposited via sputtering or electroplating. - Passivation Layer: Silicon carbide (SiC) or epoxy coating to prevent environmental damage. The structure is optimized for minimal parasitic effects and integration with CMOS processes.

4. Key Technical Specifications

Parameter Description Importance
Capacitance Range 0.1 pF to 100 F Determines charge storage capability
Voltage Rating 2.5V to 100V Defines safe operating limits
Tolerance 1% to 20% Affects circuit precision
Temperature Coefficient 50 ppm/ C to 500 ppm/ C Stability over temperature variations
ESR (Equivalent Series Resistance) 1 m to 50 m Impacts high-frequency performance
Operating Temperature -55 C to +150 C Defines environmental robustness

5. Application Fields

  • Consumer Electronics: Smartphones (RF filters), laptops (power decoupling).
  • Telecommunications: 5G base stations (high-frequency bypass capacitors).
  • Automotive: Engine control units (ECUs), LiDAR systems.
  • Industrial: Motor drives (snubber circuits), solar inverters.
  • Aerospace: Satellite power systems, avionics.

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Features
Murata Manufacturing SiC-HP Series High-temperature stability for automotive applications
TDK Corporation CGA Silicon MLCC MIM structure for 5G RF front-ends
Vishay Intertechnology VJ HIFREQ Silicon Ultra-low ESR for high-frequency power circuits
Infineon Technologies OptiMOS Trench Capacitor Integrated with MOSFETs for energy efficiency

7. Selection Guidelines

Consider the following factors: - Capacitance and Voltage Requirements: Match ratings to circuit specifications. - Frequency Response: Prioritize low ESR for high-frequency applications. - Environmental Conditions: Select temperature ratings for automotive/aerospace use. - Package Size: Use chip-scale packages for space-constrained designs. - Cost vs. Performance: Balance precision (tight tolerance) with budget constraints.

8. Industry Trends

Key trends shaping silicon capacitors include: - **Advanced Packaging:** 3D stacking and through-silicon vias (TSVs) for higher integration. - **Material Innovations:** Adoption of hafnium oxide (HfO ) for higher dielectric constants. - **Miniaturization:** Sub-micron trench structures for mobile devices. - **High-Temperature Performance:** Growth in EV and renewable energy systems requiring thermal resilience. - **Green Manufacturing:** Reduction of hazardous materials in fabrication processes.

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