Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
SFH 2201

SFH 2201

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 950NM 2SMD

4015

SFH 213

SFH 213

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 850NM RADIAL

30049

SFH 221

SFH 221

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 900NM TO39-4

182

SFH 2505-Z

SFH 2505-Z

OSRAM Opto Semiconductors, Inc.

PHOTODIODE 850NM 5MM SMD RADIAL

0

SFH 203 FA

SFH 203 FA

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 900NM RADIAL

0

SFH 2704

SFH 2704

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 900NM 2SMD

0

SFH 206K

SFH 206K

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 850NM RADIAL

14988

SFH 2200

SFH 2200

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 940NM 2SMD

3898

SFH 205 FA

SFH 205 FA

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 900NM RADIAL

383

SFH 2270R

SFH 2270R

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 560NM 2SMD

3137

SFH 213 FA

SFH 213 FA

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 900NM RADIAL

0

SFH 2240

SFH 2240

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 620NM 2SMD

3412

SFH 2500 FA-Z

SFH 2500 FA-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 900NM RADIAL

0

BPW 34 FAS-Z

BPW 34 FAS-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 880NM 2SMD GW

0

SFH 229FA

SFH 229FA

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 900NM RADIAL

0

BPW 34 FASR-Z

BPW 34 FASR-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 880NM 2SMD

1758

SFH 2701

SFH 2701

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 820NM 2SMD

14294

SFH 235 FA

SFH 235 FA

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 900NM RADIAL

12627

SFH 2430-Z

SFH 2430-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 570NM 2SMD GW

7458

SFH 2400-Z

SFH 2400-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 900NM 3SMD GW

3621

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

RFQ BOM Call Skype Email
Top