Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
SFH 2716

SFH 2716

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 620NM 0805

8531

KOM 2125-Z

KOM 2125-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 850NM 3SMD GW

0

BPX 61

BPX 61

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 850NM TO39-2

601

BPW 34 S-Z

BPW 34 S-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 850NM 2SMD GW

0

SFH 229

SFH 229

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 860NM RADIAL

0

SFH 203 PFA

SFH 203 PFA

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 850NM RADIAL

3200

SFH 2400FA-Z

SFH 2400FA-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 900NM 3SMD GW

74301

SFH 205 F

SFH 205 F

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 950NM RADIAL

16897

SFH 203 P

SFH 203 P

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 850NM RADIAL

0

BPW 34 FS-Z

BPW 34 FS-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 950NM 2SMD GW

3916

BP 104 S-Z

BP 104 S-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 850NM 2SMD

27

SFH 2440

SFH 2440

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 620NM 2SMD GW

918

BPW34FA

BPW34FA

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 880NM 2DIP

5705

SFH 2401

SFH 2401

OSRAM Opto Semiconductors, Inc.

PHOTODIODE DIL SMD

0

SFH 3410R

SFH 3410R

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 570NM 3SMD GW

0

SFH 203

SFH 203

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 850NM RADIAL

0

SFH 2504 AN23

SFH 2504 AN23

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 900NM

0

BPW 21

BPW 21

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 550NM TO39

0

BPW 34 SR-Z

BPW 34 SR-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 850NM 2SMD GW

0

BP 104 FS-Z

BP 104 FS-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 950NM 2SMD GW

0

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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