Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
SFH 2270R

SFH 2270R

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 560NM 2SMD

3137

WP3DPD1C

WP3DPD1C

Kingbright

SENSOR PHOTODIODE 940NM RADIAL

773

VEMD6060X01

VEMD6060X01

Vishay / Semiconductor - Opto Division

PHOTODIODE 700 TO 1070 NM

5455

PD333-3B/H0/L2

PD333-3B/H0/L2

Everlight Electronics

SENSOR PHOTODIODE 940NM RADIAL

0

PDB-C134

PDB-C134

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM RADIAL

12878

TEMD5120X01

TEMD5120X01

Vishay / Semiconductor - Opto Division

PHOTODIODE 790 TO 1050 NM

2

MICROFC-10010-SMT-TR

MICROFC-10010-SMT-TR

Sanyo Semiconductor/ON Semiconductor

SENSOR PHOTODIODE 420NM 4SMD

0

019-101-411

019-101-411

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE UV MICRO 0805 SMT

1960

0800-3111-011

0800-3111-011

Luna Optoelectronics (Advanced Photonix)

PHOTODIOD 800-1700NM 1.36MM TO46

688

GUVB-T21GH

GUVB-T21GH

Genicom

UV-B SENSOR (220-320NM)

163

138-11-31-211

138-11-31-211

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM

0

C30737LH-500-92C

C30737LH-500-92C

Excelitas Technologies

SENSOR PHOTODIODE 905NM 6CLCC

169

1540051EC3590

1540051EC3590

Würth Elektronik Midcom

SENSOR PHOTODIODE 940NM RADIAL

366

GUVB-T21GD-U

GUVB-T21GD-U

Genicom

UV-B SENSOR (220-320NM)

44

PIN-005D-254F

PIN-005D-254F

OSI Optoelectronics

2.4X2.4 MM UV ENHANCED NARROW BA

98

MTD1114M3B

MTD1114M3B

Marktech Optoelectronics

SENSOR PHOTODIODE 925NM

9

ARRAYC-60035-64P-PCB

ARRAYC-60035-64P-PCB

Sanyo Semiconductor/ON Semiconductor

SENSOR PHOTODIODE 420NM 84CLCC

1

QSD2030

QSD2030

Sanyo Semiconductor/ON Semiconductor

SENSOR PHOTODIODE 880NM RADIAL

290565750

HELIX-902-200

HELIX-902-200

Excelitas Technologies

SENSOR PHOTODIODE 900NM MODULE

6

MT03-026

MT03-026

Marktech Optoelectronics

PHOTODIODE 950NM 5MM2 TO-5

9

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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