Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
GUVA-C22SD

GUVA-C22SD

Genicom

UV-A SENSOR / COB2418 (2.4 X 1.8

2414

OP993

OP993

TT Electronics / Optek Technology

SENSOR PHOTODIODE 890NM TO18

424

VEMD2023SLX01

VEMD2023SLX01

Vishay / Semiconductor - Opto Division

PHOTODIODE 430 TO 1100 NM

15600

MTPD4400D-1.4

MTPD4400D-1.4

Marktech Optoelectronics

SENSOR PHOTODIODE 440NM TO46

11

290-12-22-241

290-12-22-241

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO8

161

PDB-C157

PDB-C157

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM RADIAL

0

OPR5925

OPR5925

TT Electronics / Optek Technology

SENSOR PHOTODIODE 890NM SMD

95

057-11-21-011

057-11-21-011

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO46

239

200-13-23-242

200-13-23-242

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO8

0

IN-S32GTNPD

IN-S32GTNPD

Inolux

TOP VIEW / 3527 / 3.2X2.7X1.1

8485

PD638B

PD638B

Everlight Electronics

SENSOR PHOTODIODE 940NM RADIAL

0

MTAPD-06-001

MTAPD-06-001

Marktech Optoelectronics

SENSOR PHOTODIODE 800NM TO46-2

39

GUVA-T21GD-U

GUVA-T21GD-U

Genicom

UV-A SENSOR (220-370NM)

0

SXUV300C

SXUV300C

Opto Diode Corporation

PHOTODIODE 331MM

0

TEFD4300

TEFD4300

Vishay / Semiconductor - Opto Division

PHOTODIODE 350 TO 1120 NM

820

SUF268J001

SUF268J001

Thermometrics (Amphenol Advanced Sensors)

SENSOR PHOTODIODE 925NM

458

OPR5913

OPR5913

TT Electronics / Optek Technology

SENSOR PHOTODIODE 880NM

0

MICROFC-10035-SMT-TR1

MICROFC-10035-SMT-TR1

Sanyo Semiconductor/ON Semiconductor

SENSOR PHOTODIODE 420NM 4SMD

0

GUVC-T21GH

GUVC-T21GH

Genicom

UV-C SENSOR (220-280NM)

1215

394-70-74-591

394-70-74-591

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 675NM TO3

0

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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