Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
PDB-C440-46B

PDB-C440-46B

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE TO46-2

0

ODA-5W-100K

ODA-5W-100K

Opto Diode Corporation

SENSOR PHOTODIODE 940NM TO39

0

PNZ300

PNZ300

Panasonic

SENSOR PHOTODIODE 800NM TO18-2

0

197-70-72-661

197-70-72-661

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE AVALANCHE 5MM MODULE

0

012-70-62-541

012-70-62-541

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE TO46-3

0

MTPD1346-010

MTPD1346-010

Marktech Optoelectronics

SENSOR PHOTODIODE 1300NM TO46-3

0

BS520

BS520

Sharp Microelectronics

SENSOR PHOTODIODE 560NM SIDE

0

PD481PIE000F

PD481PIE000F

Sharp Microelectronics

SENSOR PHOTODIODE 960NM RADIAL

0

AXUVHS5

AXUVHS5

Opto Diode Corporation

SENSOR ELECTRON DETECTION 1MM

0

ISL58344CIZ-T7A

ISL58344CIZ-T7A

Intersil (Renesas Electronics America)

SENSOR PHOTODIODE 700NM 9OCSP

0

PDB-C139F

PDB-C139F

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM RADIAL

0

ODD-45W

ODD-45W

Opto Diode Corporation

SENSOR PHOTODIODE 880NM TO46

0

PDB-C145

PDB-C145

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM AXIAL

0

BCS5030G1

BCS5030G1

TDK Corporation

SENSOR PHOTODIODE 580NM 2012

0

012-151-001

012-151-001

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE 800-1700NM .3MM 1206

0

055-23-21-211

055-23-21-211

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO18

0

MTPD1346-150

MTPD1346-150

Marktech Optoelectronics

SENSOR PHOTODIODE 1300NM TO46

0

PDB-C142F

PDB-C142F

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM RADIAL

0

PDB-C170

PDB-C170

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM RADIAL

0

SMD2420-001

SMD2420-001

Honeywell Sensing and Productivity Solutions

SENSOR PHOTODIODE 880NM SMD

0

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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