Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
BCS2015H1

BCS2015H1

TDK Corporation

SENSOR PHOTODIODE 580NM 0806

0

630-70-75-500

630-70-75-500

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 675NM

0

PDU-G105A-SM

PDU-G105A-SM

Luna Optoelectronics (Advanced Photonix)

DETECTOR GAN UVA 200-365NM SMD

0

MTPD1500D-2.5

MTPD1500D-2.5

Marktech Optoelectronics

SENSOR PHOTODIODE 440NM TO39

0

AXUV100

AXUV100

Opto Diode Corporation

SENSOR PHOTODIODE 254NM

0

OED-PPD11075G-B

OED-PPD11075G-B

Lumex, Inc.

SENSOR PHOTODIODE 1310NM TO46

0

394-70-74-661

394-70-74-661

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 675NM MODULE

0

BPW34FAS

BPW34FAS

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 880NM 2SMD GW

0

630-70-73-500

630-70-73-500

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 675NM

0

OPR2100HS

OPR2100HS

TT Electronics / Optek Technology

SENSOR PHOTODIODE 890NM ARRAY

0

BPW34F

BPW34F

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 950NM 2DIP

0

PD101SC0SS

PD101SC0SS

Sharp Microelectronics

SENSOR PHOTODIODE 820NM SIDE

0

BPW34FS

BPW34FS

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 950NM 2SMD GW

0

BS120E0F

BS120E0F

Sharp Microelectronics

SENSOR PHOTODIODE 560NM SIDE

0

AXUVHS11

AXUVHS11

Opto Diode Corporation

SENSOR ELECTRON DETECTION 1MM

0

ODD-525W

ODD-525W

Opto Diode Corporation

SENSOR PHOTODIODE 525NM T/H

0

PDB-C617-2

PDB-C617-2

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM PVC WIRE

0

PDI-V108-F

PDI-V108-F

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM TO233AA

0

PDB-C120-I

PDB-C120-I

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM TO206AA

0

PDV-V405

PDV-V405

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 500NM TO5

0

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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