RF Amplifiers

Image Part Number Description / PDF Quantity Rfq
BGA8H1BN6E6327XTSA1

BGA8H1BN6E6327XTSA1

IR (Infineon Technologies)

IC AMP 1.805GHZ-2.69GHZ TSNP6-2

0

BGA7H1N6E6327XTSA1

BGA7H1N6E6327XTSA1

IR (Infineon Technologies)

IC AMP LTE 2.3-2.69GHZ TSNP6-2

12905

BGA729N6E6327XTSA1

BGA729N6E6327XTSA1

IR (Infineon Technologies)

IC RF AMP 70MHZ-1GHZ TSNP6-2

7610

BGA735N16E6327XTSA1

BGA735N16E6327XTSA1

IR (Infineon Technologies)

IC AMP UMTS 800MHZ 900MHZ TSNP16

7426

BGA711N7E6327XTSA1

BGA711N7E6327XTSA1

IR (Infineon Technologies)

UMTS LOW NOISE AMPLIFIER

105000

BGA915N7E6327XTMA1

BGA915N7E6327XTMA1

IR (Infineon Technologies)

NARROW BAND LOW POWER AMPLIFIER

2658

BGA777L7E6327

BGA777L7E6327

IR (Infineon Technologies)

HIGH LINEAR DUAL-BAND UMTS LNA

217500

BGB717L7ESDE6327

BGB717L7ESDE6327

IR (Infineon Technologies)

NARROW BAND LOW POWER AMPLIFIER,

132804

BGA231L7E6327

BGA231L7E6327

IR (Infineon Technologies)

RF/MICROWAVE AMPLIFIER

5946

BGA715L7E6327

BGA715L7E6327

IR (Infineon Technologies)

FRONT-END LOW NOISE AMP FOR GPS

11336

BGAV1A10E6327XTSA1

BGAV1A10E6327XTSA1

IR (Infineon Technologies)

IC RF AMP LNA 3.5GHZ 10ATSLP

4500

BGA771L16E6327

BGA771L16E6327

IR (Infineon Technologies)

HIGH LINEAR DUAL-BAND UMTS LNA

15000

BGAH1A10E6327XTSA1

BGAH1A10E6327XTSA1

IR (Infineon Technologies)

RF MMIC 3 TO 6 GHZ

0

BGA6L1BN6E6327XTSA1

BGA6L1BN6E6327XTSA1

IR (Infineon Technologies)

IC RF AMP TSNP-6

0

BGA728L7E6327

BGA728L7E6327

IR (Infineon Technologies)

RF AMP, GP 1.7GHZ 3.6V

8417

BGA749N16E6327XTSA1

BGA749N16E6327XTSA1

IR (Infineon Technologies)

IC RF AMP MMIC RF QUAD UMTS

7500

BGAU1A10E6327XTSA1

BGAU1A10E6327XTSA1

IR (Infineon Technologies)

IC RF AMP 5GHZ 10ATSLP

2285

BGA751L7E6327

BGA751L7E6327

IR (Infineon Technologies)

RF/MICROWAVE AMPLIFIER, 1 FUNC

34948

BGA711L7E6327

BGA711L7E6327

IR (Infineon Technologies)

SINGLE-BAND UMTS LOW NOISE AMP

34989

BGM7MHLL4L12E6327XTSA1

BGM7MHLL4L12E6327XTSA1

IR (Infineon Technologies)

RF AMP MMIC

112500

RF Amplifiers

1. Overview

RF/IF amplifiers and RFID amplifiers are critical components in wireless communication systems, designed to boost signal strength while maintaining signal integrity. RF amplifiers operate across radio frequency (RF) and intermediate frequency (IF) bands, enabling signal transmission/reception in devices like base stations, IoT modules, and medical equipment. RFID amplifiers specialize in enhancing signals for radio frequency identification systems, ensuring reliable data exchange between readers and tags. These components are essential for modern technologies such as 5G networks, smart logistics, and contactless payment systems.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low Noise Amplifier (LNA)High sensitivity, minimal added noiseRF receivers, satellite communication
Power Amplifier (PA)High output power, efficiency optimizationCellular base stations, Wi-Fi routers
IF AmplifierFixed/dynamic gain control at IF bandsTelevision tuners, radar systems
Variable Gain Amplifier (VGA)Adjustable gain for signal conditioningSoftware-defined radios, test equipment
RFID Reader AmplifierImpedance matching for tag interrogationUHF RFID readers, NFC terminals

3. Structure and Components

Typical RF amplifiers consist of: - Dielectric substrate (e.g., FR4, Rogers material) with conductive traces - Transistor elements (GaAs FETs, SiGe BJTs, or GaN HEMTs) - Impedance matching networks (LC circuits or microstrip lines) - Thermal management (heat sinks or thermal vias) - Shielded enclosure for EMI protection Modern designs integrate bias tees, directional couplers, and protection diodes.

4. Key Technical Specifications

ParameterDescriptionImportance
Gain (dB)Signal amplification ratioDetermines signal reach and clarity
Noise Figure (dB)Additional noise introducedImpacts receiver sensitivity
Output Power (dBm)Maximum deliverable powerDictates transmission distance
Frequency Range (GHz)Operational bandwidthSystem compatibility factor
P1dB CompressionLinear-to-saturation thresholdEnsures signal fidelity
IP3 (dBm)Intermodulation distortion resistanceMulti-signal environment performance

5. Application Fields

  • Telecommunications: 5G NR base stations, microwave links
  • Healthcare: MRI machine RF coils, wireless endoscopy
  • Logistics: UHF RFID warehouse automation
  • Automotive: V2X communication modules, tire pressure sensors
  • Consumer Electronics: Bluetooth LE beacons, NFC payment terminals

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsLMX2500Integrated synthesizer with 15dBm output power
Analog DevicesADAR10004-channel mmWave beamformer for 24GHz RFID
STMicroelectronicsSTRF79XHighly integrated NFC/RFID transceiver
Nordic SemiconductornRF215402.4GHz front-end module with +20dB gain
ImpinjR4H001UHF Gen2 RFID reader IC with on-chip amplifier

7. Selection Guidelines

Key considerations include: - Frequency alignment with system requirements - Gain flatness across operational bandwidth - Thermal dissipation capabilities - Package type (QFN, BGA, or connectorized) - Environmental compliance (temperature, humidity) - Cost vs. performance trade-offs

8. Industry Trends

Emerging trends include: - Transition to GaN technology for higher power density - Silicon integration for mmWave applications - AI-driven dynamic impedance matching - Energy-efficient Class-J and Doherty architectures - Convergence with photonic ICs for 6G systems

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