RF Amplifiers

Image Part Number Description / PDF Quantity Rfq
PTMA210152MV1

PTMA210152MV1

IR (Infineon Technologies)

NARROW BAND HIGH POWER AMPLIFIER

0

BGA7H1BN6E6327XTSA1

BGA7H1BN6E6327XTSA1

IR (Infineon Technologies)

IC RF AMP LTE 1.805GHZ-2.69GHZ

0

BGA751N7E6327XTSA1

BGA751N7E6327XTSA1

IR (Infineon Technologies)

RF/MICROWAVE AMPLIFIER, 1 FUNC

36491

BGA420H6433XTMA1

BGA420H6433XTMA1

IR (Infineon Technologies)

BGA420

120000

BGA420H6327XTSA1

BGA420H6327XTSA1

IR (Infineon Technologies)

IC RF AMP GP 0HZ-3GHZ SOT343-4

3855

BGA 428 E6327

BGA 428 E6327

IR (Infineon Technologies)

IC AMP CELL 1.4-2.5GHZ SOT363-6

95

BGA614H6327XTSA1

BGA614H6327XTSA1

IR (Infineon Technologies)

IC RF AMP CDMA 2.4GHZ SOT343-4

4726

BGM7LLHM4L12E6327XTSA1

BGM7LLHM4L12E6327XTSA1

IR (Infineon Technologies)

IC AMP LTE 700MHZ-2.7GHZ

682500

BGA420H6327

BGA420H6327

IR (Infineon Technologies)

BGA420 - GENERAL PURPOSE LNAS

6000

PTMA080302MV1AUMA1

PTMA080302MV1AUMA1

IR (Infineon Technologies)

WIDE BAND LOW POWER AMPLIFIER

221

BGA5L1BN6E6327XTSA1

BGA5L1BN6E6327XTSA1

IR (Infineon Technologies)

IC RF AMP LTE

11917

BGB717L7ESDE6327XTSA1

BGB717L7ESDE6327XTSA1

IR (Infineon Technologies)

NARROW BAND HIGH POWER AMPLIFIER

90000

BGA 734L16 E6327

BGA 734L16 E6327

IR (Infineon Technologies)

HIGHLY INTEGRATED TRI

15000

BGA8L1BN6E6327XTSA1

BGA8L1BN6E6327XTSA1

IR (Infineon Technologies)

IC RF AMP 703MHZ-960MHZ TSNP6-2

0

BGA748L16E6327XTSA1

BGA748L16E6327XTSA1

IR (Infineon Technologies)

HIGH LINEARITY QUAD

570000

BGA7L1N6E6327XTSA1

BGA7L1N6E6327XTSA1

IR (Infineon Technologies)

IC AMP LTE 728MHZ-960MHZ TSNP6-2

16022

BGA622E6327

BGA622E6327

IR (Infineon Technologies)

RF/MICROWAVE AMPLIFIER, 1 FUNC

0

BGM15MA12E6327XTSA1

BGM15MA12E6327XTSA1

IR (Infineon Technologies)

MID

9000

BGM15LA12E6327XTSA1

BGM15LA12E6327XTSA1

IR (Infineon Technologies)

BGM15LA12 - RF MODULES (LMM)

35995

BGM15HA12E6327XTSA1

BGM15HA12E6327XTSA1

IR (Infineon Technologies)

BGM15HA12 - LOW-BAND LNA MULTIPL

0

RF Amplifiers

1. Overview

RF/IF amplifiers and RFID amplifiers are critical components in wireless communication systems, designed to boost signal strength while maintaining signal integrity. RF amplifiers operate across radio frequency (RF) and intermediate frequency (IF) bands, enabling signal transmission/reception in devices like base stations, IoT modules, and medical equipment. RFID amplifiers specialize in enhancing signals for radio frequency identification systems, ensuring reliable data exchange between readers and tags. These components are essential for modern technologies such as 5G networks, smart logistics, and contactless payment systems.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low Noise Amplifier (LNA)High sensitivity, minimal added noiseRF receivers, satellite communication
Power Amplifier (PA)High output power, efficiency optimizationCellular base stations, Wi-Fi routers
IF AmplifierFixed/dynamic gain control at IF bandsTelevision tuners, radar systems
Variable Gain Amplifier (VGA)Adjustable gain for signal conditioningSoftware-defined radios, test equipment
RFID Reader AmplifierImpedance matching for tag interrogationUHF RFID readers, NFC terminals

3. Structure and Components

Typical RF amplifiers consist of: - Dielectric substrate (e.g., FR4, Rogers material) with conductive traces - Transistor elements (GaAs FETs, SiGe BJTs, or GaN HEMTs) - Impedance matching networks (LC circuits or microstrip lines) - Thermal management (heat sinks or thermal vias) - Shielded enclosure for EMI protection Modern designs integrate bias tees, directional couplers, and protection diodes.

4. Key Technical Specifications

ParameterDescriptionImportance
Gain (dB)Signal amplification ratioDetermines signal reach and clarity
Noise Figure (dB)Additional noise introducedImpacts receiver sensitivity
Output Power (dBm)Maximum deliverable powerDictates transmission distance
Frequency Range (GHz)Operational bandwidthSystem compatibility factor
P1dB CompressionLinear-to-saturation thresholdEnsures signal fidelity
IP3 (dBm)Intermodulation distortion resistanceMulti-signal environment performance

5. Application Fields

  • Telecommunications: 5G NR base stations, microwave links
  • Healthcare: MRI machine RF coils, wireless endoscopy
  • Logistics: UHF RFID warehouse automation
  • Automotive: V2X communication modules, tire pressure sensors
  • Consumer Electronics: Bluetooth LE beacons, NFC payment terminals

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsLMX2500Integrated synthesizer with 15dBm output power
Analog DevicesADAR10004-channel mmWave beamformer for 24GHz RFID
STMicroelectronicsSTRF79XHighly integrated NFC/RFID transceiver
Nordic SemiconductornRF215402.4GHz front-end module with +20dB gain
ImpinjR4H001UHF Gen2 RFID reader IC with on-chip amplifier

7. Selection Guidelines

Key considerations include: - Frequency alignment with system requirements - Gain flatness across operational bandwidth - Thermal dissipation capabilities - Package type (QFN, BGA, or connectorized) - Environmental compliance (temperature, humidity) - Cost vs. performance trade-offs

8. Industry Trends

Emerging trends include: - Transition to GaN technology for higher power density - Silicon integration for mmWave applications - AI-driven dynamic impedance matching - Energy-efficient Class-J and Doherty architectures - Convergence with photonic ICs for 6G systems

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