| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
 |
Analog Devices, Inc. |
IC RF AMP GP 300MHZ-3GHZ SOT26 |
11 |
|
 |
Skyworks Solutions, Inc. |
IC RF AMP LTE 728MHZ-768MHZ |
0 |
|
 |
IR (Infineon Technologies) |
IC RF AMP LTE 2.3GHZ-2.69GHZ |
10931 |
|
 |
MITEQ, Inc.（L3 Narda-MITEQ） |
LNA 4-12 GHZ |
1 |
|
 |
Renesas Electronics America |
VFQFPN 4.00X4.00X0.80 MM, 0.50MM |
0 |
|
 |
Broadcom |
IC RF AMP IEEE 1.7GHZ-3GHZ 8LPCC |
237 |
|
 |
Analog Devices, Inc. |
IC AMP RADAR 500MHZ-18.5GHZ SMT |
29 |
|
 |
Texas Instruments |
IC AMP CELL 50MHZ-350MHZ SOT23-6 |
220 |
|
 |
Analog Devices, Inc. |
IC RF AMP GP 24GHZ-28GHZ 24CSMT |
10 |
|
 |
Quantum Microwave Components |
WR-28 ACTIVE MULTIPLIERMF X2 |
0 |
|
 |
Analog Devices, Inc. |
IC AMP RADAR 100MHZ-20GHZ 24SMT |
0 |
|
 |
Analog Devices, Inc. |
DC - 10 GHZ 2 WATT PA |
0 |
|
 |
Analog Devices, Inc. |
31 DBM P1DB, 20 DB GAIN |
10 |
|
 |
Analog Devices, Inc. |
IC OPAMP VGA 2 CIRCUIT 16SOIC |
49 |
|
 |
Analog Devices, Inc. |
IC RF AMP RADAR 0HZ-18GHZ 32SMT |
6 |
|
 |
CEL (California Eastern Laboratories) |
LOW NOISE AMPLIFIER HJ-FET |
1600 |
|
 |
NXP Semiconductors |
IC AMP 978MHZ-1.09GHZ TO270 WB14 |
0 |
|
 |
Metelics (MACOM Technology Solutions) |
IC RF AMP CATV 5MHZ-300MHZ 8MSOP |
1503 |
|
 |
MITEQ, Inc.（L3 Narda-MITEQ） |
LNA 4 TO 8 GHZ |
0 |
|
 |
NXP Semiconductors |
WIDE BAND LOW POWER AMPLIFIER |
0 |
|
RF/IF amplifiers and RFID amplifiers are critical components in wireless communication systems, designed to boost signal strength while maintaining signal integrity. RF amplifiers operate across radio frequency (RF) and intermediate frequency (IF) bands, enabling signal transmission/reception in devices like base stations, IoT modules, and medical equipment. RFID amplifiers specialize in enhancing signals for radio frequency identification systems, ensuring reliable data exchange between readers and tags. These components are essential for modern technologies such as 5G networks, smart logistics, and contactless payment systems.
| Type | Functional Characteristics | Application Examples |
|---|---|---|
| Low Noise Amplifier (LNA) | High sensitivity, minimal added noise | RF receivers, satellite communication |
| Power Amplifier (PA) | High output power, efficiency optimization | Cellular base stations, Wi-Fi routers |
| IF Amplifier | Fixed/dynamic gain control at IF bands | Television tuners, radar systems |
| Variable Gain Amplifier (VGA) | Adjustable gain for signal conditioning | Software-defined radios, test equipment |
| RFID Reader Amplifier | Impedance matching for tag interrogation | UHF RFID readers, NFC terminals |
Typical RF amplifiers consist of: - Dielectric substrate (e.g., FR4, Rogers material) with conductive traces - Transistor elements (GaAs FETs, SiGe BJTs, or GaN HEMTs) - Impedance matching networks (LC circuits or microstrip lines) - Thermal management (heat sinks or thermal vias) - Shielded enclosure for EMI protection Modern designs integrate bias tees, directional couplers, and protection diodes.
| Parameter | Description | Importance |
|---|---|---|
| Gain (dB) | Signal amplification ratio | Determines signal reach and clarity |
| Noise Figure (dB) | Additional noise introduced | Impacts receiver sensitivity |
| Output Power (dBm) | Maximum deliverable power | Dictates transmission distance |
| Frequency Range (GHz) | Operational bandwidth | System compatibility factor |
| P1dB Compression | Linear-to-saturation threshold | Ensures signal fidelity |
| IP3 (dBm) | Intermodulation distortion resistance | Multi-signal environment performance |
| Manufacturer | Representative Product | Key Features |
|---|---|---|
| Texas Instruments | LMX2500 | Integrated synthesizer with 15dBm output power |
| Analog Devices | ADAR1000 | 4-channel mmWave beamformer for 24GHz RFID |
| STMicroelectronics | STRF79X | Highly integrated NFC/RFID transceiver |
| Nordic Semiconductor | nRF21540 | 2.4GHz front-end module with +20dB gain |
| Impinj | R4H001 | UHF Gen2 RFID reader IC with on-chip amplifier |
Key considerations include: - Frequency alignment with system requirements - Gain flatness across operational bandwidth - Thermal dissipation capabilities - Package type (QFN, BGA, or connectorized) - Environmental compliance (temperature, humidity) - Cost vs. performance trade-offs
Emerging trends include: - Transition to GaN technology for higher power density - Silicon integration for mmWave applications - AI-driven dynamic impedance matching - Energy-efficient Class-J and Doherty architectures - Convergence with photonic ICs for 6G systems